Product Information

BZX85C3V9 R0

BZX85C3V9 R0 electronic component of Taiwan Semiconductor

Datasheet
Diode Zener Single 3.9V 5% 1.3W 2-Pin DO-41 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2257: USD 0.0291 ea
Line Total: USD 65.68

0 - Global Stock
MOQ: 2257  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BZX85C3V9 R0
Taiwan Semiconductor

1 : USD 0.7326
10 : USD 0.666
100 : USD 0.1559
1000 : USD 0.0571
5000 : USD 0.0533
10000 : USD 0.0432
20000 : USD 0.0432
45000 : USD 0.0406
100000 : USD 0.0381

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 2257
Multiples : 1

Stock Image

BZX85C3V9 R0
Taiwan Semiconductor

2257 : USD 0.0291

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Configuration
Mounting Style
Packaging
Rev Curr
Operating Temperature Classification
Type
Zener Test Current
Package Type
Rad Hardened
Operating Temp Range
Pin Count
Knee Impedance
LoadingGif

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BZX85C3V3 - BZX85C56 Taiwan Semiconductor Small Signal Product 5% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 3.3V to 56V - VZ Tolerance selection of 5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free and RoHS compliant - High reliability glass passivation insuring parameter stability and protection against junction contamination DO-41 Hermetically Sealed Glass MECHANICAL DATA - Case: DO-41 o - High temperature soldering guaranteed: 260 C/10s - Polarity: Cathode indicated by polarity band - Weight : 310mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBO VALUE UNIT Power Dissipation P 1.3 W D Forward Voltage I = 10 mA V 1.2 F V F o Thermal Resistance (Junction to Ambient) R 130 (Note 1) C/W JA o Junction and Storage Temperature Range T , T - 65 to +200 J STG C Note 1: Valid provided that electrodes are kept at ambient temerature . Zener I vs. V Characteristics V : Voltage at I ZK BR I : Test current for voltage V ZK BR Z : Dynamic impedance at I ZK ZK I : Test current for voltage V ZT Z V : Voltage at current I Z ZT Z : Dynamic impedance at I ZT ZT I : Maximum steady state current ZM : Voltage at I V ZM ZM Version: G1606BZX85C3V3 - BZX85C56 Taiwan Semiconductor Small Signal Product o ELECTRICAL CHARACTERISTICS ( T = 25 C unless otherwise noted ) A V I (Volt) Z ZT I Z I () I Z I () I V (A) V Marking ZT ZT ZT ZK ZK ZK R R R Part Number Code (mA) Max (mA) Max Max (V) Min Nom Max BZX85C3V3 BZX85C3V3 3.1 3.3 3.5 80 20 1 400 40 1 BZX85C3V6 BZX85C3V6 3.4 3.6 3.8 60 20 1 500 20 1 BZX85C3V9 BZX85C3V9 3.7 3.9 4.1 60 15 1 500 20 1 BZX85C4V3 BZX85C4V3 4.0 4.3 4.6 50 13 1 500 3 1 BZX85C4V7 BZX85C4V7 4.4 4.7 5.0 45 13 1 500 3 1 BZX85C5V1 BZX85C5V1 4.8 5.1 5.4 45 10 1 500 1 1.5 BZX85C5V6 BZX85C5V6 5.2 5.6 6.0 45 7 1 400 1 2 BZX85C6V2 BZX85C6V2 5.8 6.2 6.6 35 4 1 300 1 3 BZX85C6V8 BZX85C6V8 6.4 6.8 7.2 35 3.5 1 300 1 4 BZX85C7V5 BZX85C7V5 7.0 7.5 7.9 35 3 0.5 200 1 4.5 BZX85C8V2 BZX85C8V2 7.7 8.2 8.7 25 5 0.5 200 1 6.2 BZX85C9V1 BZX85C9V1 8.5 9.1 9.6 25 5 0.5 200 1 6.9 BZX85C10 BZX85C10 9.4 10 10.6 25 7 0.5 200 0.5 7.5 BZX85C11 BZX85C11 10.4 11 11.6 20 8 0.5 300 0.5 8.2 BZX85C12 BZX85C12 11.4 12 12.7 20 9 0.5 350 0.5 9.1 BZX85C13 BZX85C13 12.4 13 14.1 20 10 0.5 400 0.5 10 BZX85C15 BZX85C15 13.8 15 15.6 15 15 0.5 500 0.5 11 BZX85C16 BZX85C16 15.3 16 17.1 15 15 0.5 500 0.5 12 BZX85C18 BZX85C18 16.8 18 19.1 15 20 0.5 500 0.5 13 BZX85C20 BZX85C20 18.8 20 21.2 10 24 0.5 600 0.5 15 BZX85C22 BZX85C22 20.8 22 23.3 10 25 0.5 600 0.5 16 BZX85C24 BZX85C24 22.8 24 25.6 10 25 0.5 600 0.5 18 BZX85C27 BZX85C27 25.1 27 28.9 8 30 0.25 750 0.5 20 BZX85C30 BZX85C30 28.0 30 32.0 8 30 0.25 1000 0.5 22 BZX85C33 BZX85C33 31.0 33 35.0 8 35 0.25 1000 0.5 24 BZX85C36 BZX85C36 34.0 36 38.0 8 40 0.25 1000 0.5 25 BZX85C39 BZX85C39 37.0 39 41.0 6 45 0.25 1000 0.5 27 BZX85C43 BZX85C43 40.0 43 46.0 6 50 0.25 1000 0.5 30 BZX85C47 BZX85C47 44.0 47 50.0 4 90 0.25 1500 0.5 33 BZX85C51 BZX85C51 48.0 51 54.0 4 115 0.25 1500 0.5 36 BZX85C56 BZX85C56 52.0 56 60.0 4 120 0.25 2000 0.5 39 Notes 1. The Zener Voltage (V ) is tested under pulse condition of 10ms. Z 2. The device numbers listed have a standard tolerance on the nomial zener voltage of 5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(I or I ) is superimposed to I or I . ZT ZK ZT ZK Version: G1606

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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