ES2B R4 Taiwan Semiconductor

ES2A - ES2J Taiwan Semiconductor 2A, 50V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 2 A F(AV) Low profile package V 50 - 600 V RRM Super fast recovery time for high efficiency I 50 A Compliant to RoHS Directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AA (SMB) Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Packing code with suffix means green compound (halogen-free) Part no. with suffix H means AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.09 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT Marking code on the device ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J Repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Reverse voltage, total rms value V 30 70 105 140 210 280 350 420 V R(RMS) Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Forward current I 2 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:K1701 ES2A - ES2J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Lead Thermal Resistance R 20 C/W JL Junction to Ambient Thermal Resistance R 75 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - ES2A V - ES2B V 0.95 ES2C - V ES2D - V (1) Forward voltage per diode I = 2A,T = 25C V F J F ES2F - V 1.30 ES2G - V - ES2H V 1.70 ES2J - V - 10 T = 25C A J (2) Reverse current rated V per diode I R R - 350 T = 125C A J ES2A - pF ES2B - pF 25 - pF ES2C ES2D - pF Junction capacitance 1 MHz, V =4.0V C R J ES2F - pF ES2G - pF 20 ES2H - pF ES2J - pF I =0.5A ,I =1.0A F R Reverse recovery time t - 35 ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:K1701