Product Information

GP1005

GP1005 electronic component of Taiwan Semiconductor

Datasheet
Diode 600V 10A 3-Pin(3+Tab) TO-220AB

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 2.9403 ea
Line Total: USD 73.51

0 - Global Stock
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 25
Multiples : 1

Stock Image

GP1005
Taiwan Semiconductor

25 : USD 2.847
100 : USD 1.4715
250 : USD 0.5981
500 : USD 0.4968
1000 : USD 0.3929
2500 : USD 0.3645
5000 : USD 0.3375

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
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GP1001 - GP1007 10.0 AMPS. Glass Passivated Rectifiers TO-220AB RoHSRoHS Pb CCOOMMPPLILIANANCECE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix on packing code & prefix on datecode Mechanical Data Cases: TO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant Dimensions in inches and (millimeters) Marking Diagram Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed GP100X = Specific Device Code Polarity: As marked G = Green Compound Y = Year High temperature soldering guaranteed: 260 /10 seconds .16", (4.06mm) from case. WW = Work Week Weight: 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% GP GP GP GP GP GP GP Symbol Units Type Number 1001 1002 1003 1004 1005 1006 1007 Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 10 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 125 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.1 V F @ 5 A 5 Maximum DC Reverse Current at @ T =25 A I uA R Rated DC Blocking Voltage @ T =125 A 200 Typical Junction Capacitance (Note 2) Cj 30 pF o Typical Thermal Resistance R 3 JC C/W O Operating and Storage Temperature Range T , T - 65 to + 150 J STG C Note1: Pulse Test with PW=300 usec, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E11RATINGS AND CHARACTERISTIC CURVES (GP1001 THRU GP1007) FIG.1- MAXMUM FORWARD CURRENT DERATING FIG. 2- TYPICAL REVERSE CHARACTERISTICS PER LEG CURVE 12 100 10 8 10 TA=125 6 RESISTIVE OF 4 INDUCTIVE LOAD 2 0 50 100 150 1 TA=25 o CASE TEMPERATURE( C) 0.1 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD 0 20 40 60 80 100 120 140 SURGE CURRENT 175 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 150 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 120 100 10 80 60 1 40 TA=25 Pulse Width=300us TA=25 1% Duty Cycle 20 0 0.1 0.1 1 10 100 1000 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:E11 AVERAGE FORWARD PEAK FORWARD SURGE JUNCTION CAPACITANCE (pF) CURRENT CURRENT (A) (A) INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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