HERAF1005GHC0 Taiwan Semiconductor

HERAF1001G - HERAF1008G Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Isolated Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High surge current capability - High current capability - High reliability - UL Recognized File E-326243 1 2 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: ITO-220AC Molding compound: UL flammability classification rating 94V-0 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF PARAMETER SYMBOL UNIT 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G Maximum repetitive peak reverse voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 300 400 600 800 1000 V DC Maximum average forward rectified current I 10 A F(AV) Peak forward surge current, 8.3 ms single half I 150 A FSM sine-wave superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.0 1.3 1.7 V F I = 10 A F T =25C 10 J Maximum reverse current rated V I A R R T =125C 400 J Maximum reverse recovery time (Note 2) t 50 80 ns rr Typical junction capacitance (Note 3) C 80 60 pF J Typical thermal resistance R 2 C/W JC Operating junction temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with PW=300 s, 1% duty cycle Note 2: Test conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC. Version: H1511HERAF1001G - HERAF1008G Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PACKING CODE PART NO. PACKING CODE PACKAGE PACKING PART NO. (*) SUFFIX SUFFIX HERAF100xG H C0 G ITO-220AC 50 / Tube (Note 1) Note 1: defines voltage from 50V (HERAF1001G) to 1000V (HERAF1008G) *: Optional available EXAMPLE PACKING CODE PART NO. EXAMPLE P/N PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified HERAF1001GHC0G HERAF1001G H C0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM FORWARD CURRENT FIG. 2 TYPICAL REVERSE CHARACTERISTICS DERATING CURVE 1000 12 10 100 8 T =125 C J 6 10 4 1 T =25 C J Resistive or 2 inductive load with heat sink 0 0. 1 050 100 150 0 20 40 60 80 100 120 140 CASE TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD FIG.4 TYPICAL FORWARD CHARACTERISTICS SURGE CURRENT 100 150 HERAF1001G-04G 8.3ms single half sine wave 120 10 90 60 1 HERAF1005G 30 HERAF1006G-08G 0 0. 1 110 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Version: H1511 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A)