MTZJ10B Taiwan Semiconductor

MTZJ SERIES 500mW Hermetically Sealed Glass Pb RoRoHSHS Zener Diodes COCOMMPPLLIIAANNCECE DO-34 Features Zener voltage range 2.0 to 39 volts DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and leads are readily solderable RoHS compliant Solder hot dip Tin (Sn) lead finish Cathode indicated by polarity band Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics o Rating at 25 C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation Pd 500 mW O Lead temperature (1/16 from case for 10 Lt 230 C seconds) O Operating Junction Temperature T + 175 C J O Storage Temperature Range T -65 to + 200 C STG Version: A07 RATINGS AND CHARACTERISTIC CURVES (MTZJ SERIES) 10 1 0.1 5.1 4.7 5.6 6.8 4.3 0.01 6.2 7.5 3.9 8.2 9.1 10 12 15 11 13 3.6 16 22 24 18 27 30 33 36 20 39 0.001 0 5 10 15 20 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 10000 600 PRSM 500 t 1000 400 100 300 200 10 100 1 0 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() TIME:t(ms) Pd-TaCHARACTERISTICS PRSM-TIME CHARACTERISTICS 0.1 30 1000 Rth(j-a) 0.08 25 0.06 100 Rth(j-c) 20 0.04 15 0.02 Mounted on epoxy board 10 0 IM=10mA IF=100mA 10 -0.02 5 time 1ms -0.04 1 300us 0 -0.06 -0.08 -5 0.1 010 20 30 40 0.001 0.01 0.1 1 10 100 1000 ZENER VOLTAGEVz(V) TIME:t(s) z-Vz CHARACTERISTICS Rth-t CHARACTERISTICS ZENER CURRENT:Iz(mA) TEMP.COEFFICIENCE:z(/) POWER DISSIPATION:Pd(mW) TEMP.COEFFICIENCE:z(mV/) TRANSIENT REVERSE SURGE MAXIMUM THAERMAL IMPEDANCE:Rth (/W) POWER:PRSM(W)