P4SMA75CA R3G Taiwan Semiconductor

P4SMA75CA R3G electronic component of Taiwan Semiconductor
P4SMA75CA R3G Taiwan Semiconductor
P4SMA75CA R3G ESD Protection Diodes / TVS Diodes
P4SMA75CA R3G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of P4SMA75CA R3G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P4SMA75CA R3G ESD Protection Diodes / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. P4SMA75CA R3G
Manufacturer: Taiwan Semiconductor
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes 400W 75V 5% Bidirect ional TVS
Datasheet: P4SMA75CA R3G Datasheet (PDF)
Price (USD)
146: USD 0.0166 ea
Line Total: USD 2.42 
Availability : 0
  
QtyUnit Price
146$ 0.0166
250$ 0.0154
500$ 0.0144
1000$ 0.0131
3000$ 0.0119

Availability 0
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 6411
Multiples : 1
QtyUnit Price
6411$ 0.0426
9662$ 0.0282
9757$ 0.028
9853$ 0.0277
14493$ 0.0188
14706$ 0.0186
14815$ 0.0184
14926$ 0.0183
15152$ 0.018


Availability 0
Ship by Wed. 29 Oct to Fri. 31 Oct
MOQ : 3600
Multiples : 3600
QtyUnit Price
3600$ 0.2315
7200$ 0.2303
10800$ 0.2162
21600$ 0.2125


Availability 0
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 12904
Multiples : 1
QtyUnit Price
12904$ 0.0212
13072$ 0.0209
13158$ 0.0207


Availability 0
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 146
Multiples : 1
QtyUnit Price
146$ 0.0166
250$ 0.0154
500$ 0.0144
1000$ 0.0131
3000$ 0.0119

   
Manufacturer
Product Category
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We are delighted to provide the P4SMA75CA R3G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P4SMA75CA R3G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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P4SMA SERIES Taiwan Semiconductor CREAT BY ART 400W, 6.8V - 200V Suface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Typical I less than 1A above 10V R - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified DO-214AC (SMA) MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) o MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT o P 400 Peak power dissipation at T =25 C, Tp=1ms (Note 1) Watts PK A Peak forward surge current, 8.3 ms single half sine-wave I 40 A FSM superimposed on rated load Maximum instantaneous forward voltage at 25 A for V 3.5 Volts F Unidirectional only O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 C STG o Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 C Per Fig. 2 A Devices for Bipolar Applications 1. For Bidirectional Use C or CA Suffix for Types P4SMA6.8 through Types P4SMA200A 2. Electrical Characterstics Apply in Both Directions ORDER INFORMATION (EXAMPLE) P4SMA24AR3G Greencompoundcode Packingcode Partno. Document Number: DS D1409030 Version: M15P4SMA SERIES Taiwan Semiconductor o RATINGS AND CHARACTERISTICS CURVES (T =25 C unless otherwise noted) A FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) A tp, PULSE WIDTH, (us) FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 50 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF I 8.3ms Single Half Sine Wave PPM 120 Peak Value 40 I PPM 100 Half Value-I /2 PPM 30 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 20 40 10 20 td 0 0 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 100000 10000 VR=0 1000 MEASURED at STAND-OFF 100 VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS D1409030 Version: M15 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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