Product Information

RS2B R5

Name: RS2B R5
Brand: Taiwan Semiconductor
SKU: RS2BR5_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

RS2B R5 electronic component of Taiwan Semiconductor

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Rectifiers 150ns 2A 100V Fast Recovery Rectifier

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3400: USD 0.1186 ea
Line Total: USD 403.24

0 - Global Stock

MOQ: 3400 Multiples: 3400
Pack Size: 3400

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Thu. 30 May MOQ : 3400 Multiples : 3400 RS2B R5 Taiwan Semiconductor	3400 : USD 0.1186 9350 : USD 0.1058 24650 : USD 0.0987 49300 : USD 0.0952

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Additional Infomation About Product

CREAT BY ART RS2A - RS2M 2.0 AMP. Surface Mount Fast Recovery Rectifiers SMB/DO-214AA Features For surface mounted application Glass passivated junction chip Built-in strain relief, ideal for automated placement Plastic material used carries Underwriters Laboratory Classification 94V-0 Fast switching for high efficiency High temperature soldering: 260 / 10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminals: Pure tin plated, Lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.093 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) R5G RS2A SMB 850 / 7 REEL R5 Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. RS RS RS RS RS RS RS Symbol Unit Parameter 2A 2B 2D 2G 2J 2K 2M Maximum Repetitive Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 2 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 50 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.3 V F 2 A Maximum Reverse Current Rated VR T =25 5 A I uA R T =125 50 A Maximum Reverse Recovery Time (Note 2) 150 500 Trr 250 nS Typical Junction Capacitance (Note 3) Cj 50 pF R 55 jA O Typical Thermal Resistance C/W R 18 jL O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 C STG Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E13RATINGS AND CHARACTERISTIC CURVES (RS2A THRU RS2M) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS 2.5 100 2 1.5 TA=125 10 1 RESISTIVE OR 0.5 INDUCTIVE LOAD 0 1 0 255075 100 125 150 o LEAD TEMPERATURE ( C) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD TA=25 SURGE CURRENT 50 0. 1 8.3mS Single Half Sine Wave 0 20 40 60 80 100 120 140 JEDEC Method 40 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 30 FIG. 5 TYPICAL FORWARD CHARACTERISTICS 20 100 10 Pulse Width=300us 1% Duty Cycle TA=25 0 1 10 100 10 NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE 100 1 TA=25 f=1.0MHz Vsig=50mVp-p TA=25 0. 1 0. 01 10 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 1 10 100 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:E13 PEAK FORWARD SURGE AVERAGE FORWARD CURRENT CAPACITANCE (pF) CURRENT (A) (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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