Product Information

S2JA R2

S2JA R2 electronic component of Taiwan Semiconductor

Datasheet
Diode Switching 600V 1.5A 2-Pin SMA T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.0328 ea
Line Total: USD 164

0 - Global Stock
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5000
Multiples : 5000

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S2JA R2
Taiwan Semiconductor

5000 : USD 0.0328

     
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RoHS - XON
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CREAT BY ART S2AA - S2MA 1.5AMPS Surface Mount Rectifiers SMA/DO-214AC Features For surface mounted application Glass passivated junction chip Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: 260/10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.064 grams Ordering Information (example) Packing Green Compound Part No. Package Packing code Packing code R3G S2AA SMA 1.8K / 7" REEL R3 Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% S2 S2 S2 S2 S2 S2 S2 Symbol Units Type Number AA BA DA GA JA KA MA V Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1.5 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 50 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.1 V F @ 1.5A 5 Maximum DC Reverse Current at @ T =25 uA A I R Rated DC Blocking Voltage @ T =125 125 uA A Maximum Reverse Recovery Time (Note 2) Trr 1.5 uS Typical Junction Capacitance (Note 3) 30 Cj pF R 16 JL O Typical Thermal Resistance C/W R 53 JA O Operating Temperature Range T - 55 to + 150 C J O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Version:G12RATINGS AND CHARACTERISTIC CURVES (S2AA THRU S2MA) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 10 2 TA=125 1.5 TA=100 1 1 RESISTIVE OR INDUCTIVE LOAD 0.5 0 50 60 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0. 1 o LEAD TEMPERATURE ( C) TA=25 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 0. 01 0 20 40 60 80 100 120 140 8.3mS Single Half Sine Wave 40 JEDEC Method PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 30 20 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 10 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 1 FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 0. 1 10 TA=25 Pulse Width=300us 1% Duty Cycle TA=25 f=1.0MHz Vsig=50mVp-p 0. 01 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1 FORWARD VOLTAGE (V) 0. 1 1 10 100 REVERSE VOLTAGE (V) Version:G12 PEAK FORWARD SURGE URRENT (A) AVERAGE FORWARD CURRENT (A) JUNCTION CAPACITANCE (pF) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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