Product Information

SFAF808G C0

SFAF808G C0 electronic component of Taiwan Semiconductor

Datasheet
Diode Switching 600V 8A 2-Pin(2+Tab) ITO-220AC Tube

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

21: USD 0.3483 ea
Line Total: USD 7.31

925 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 21  Multiples: 1
Pack Size: 1
Availability Price Quantity
925 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 21
Multiples : 1

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SFAF808G C0
Taiwan Semiconductor

21 : USD 0.3483

     
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RoHS - XON
Icon ROHS
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SFAF801G - SFAF808G 8.0AMPS. Isolated Glass Passivated Super Fast Rectifiers ITO-220AC Features UL Recognized File E-326243 High efficiency, low VF. High current capavility High reliability High surge current capability Low power loss. For use in low voltage, high frequency inverter, free wheeling, and polarity protection application Green compound with suffix on packing code & prefix on datecode. Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/10 seconds 0.25 .,(6.35mm) from case. Weight: 1.7 grams Mounting torque: 5 in - 1bs. Max. Ordering Information(example) Packing code Packing code Part No. Package Packing (Green) C0G SFAF801G ITO-220AC 50 / TUBE C0 Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF Symbol Units Parameter 801G 802G 803G 804G 805G 806G 807G 808G Maximum Recurrent Peak Reverse Voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS Voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 500 600 V DC Maximum Average Forward Rectified Current I 8 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 125 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 0.95 1.3 1.7 V F 8 A Maximum DC Reverse Current T =25 10 uA A I R at Rated DC Blocking Voltage T =100 400 A uA Maximum Reverse Recovery Time (Note 2) Trr 35 nS Typical Junction Capacitance (Note 3) 90 60 Cj pF O Typical Thermal Resistance R 4 JC C/W O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A. F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:I13RATINGS AND CHARACTERISTIC CURVES (SFAF801G THRU SFAF808G) FIG.1- MAXIMUM FORWARD CURRENT FIG. 2- TYPICAL REVERSE CHARACTERISTICS DERATING CURVE 1000 10 8 6 100 TA=100 4 RESISTIVE OR 2 INDUCTIVELOAD 10 TA=75 WITH HEATSINK 0 050 100 150 o CASE TEMPERATURE ( C) 1 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD TA=25 SURGE CURRENT 150 8.3ms Single Half Sine Wave 0. 1 JEDEC Method 120 0 20 40 60 80 100 120 140 o PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TA=25 C 90 60 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 30 10 0 SFAF801G-SFAF804G 0 1 10 100 NUMBER OF CYCLES AT 60 Hz SFAF805G-SFAF806G FIG. 4- TYPICAL JUNCTION CAPACITANCE 10 100 o TA=25 C 90 80 SFAF801G~SFAF804G 1 70 SFAF807G-SFAF808G 60 o TA=25 C Pulse Width=300us SFAF805G~SFAF808G 50 1% Duty Cycle 0.1 40 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 1 10 100 1000 FORWARD VOLTAGE. (V) REVERSE VOLTAGE. (V) Version:I13 PEAK FORWARD SURGE CURRENT AVERAGE FORWARD A CAPACITANCE (pF) (A) CURRENT (A) INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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