Product Information

SMAJ188A

SMAJ188A electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor TVS Diodes - Transient Voltage Suppressors 188V 300W 5% Uni
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6077 ea
Line Total: USD 0.61

7245 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7144 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

SMAJ188A
Taiwan Semiconductor

1 : USD 0.4474
10 : USD 0.3139
100 : USD 0.1587
1000 : USD 0.0978
2500 : USD 0.0851
7500 : USD 0.0713
22500 : USD 0.0701
45000 : USD 0.0633

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Length
Operating Temperature Range
Width
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

creat by art SMAJ SERIES 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC RoHSRoHS Pb COCOMMPPLILIANCANCEE Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min Typical I less than 1uA above 10V R High temperature soldering guaranteed: 260 / 10 seconds at terminals Plastic material used carried Underwriters Laboratory Flammability Classification 94V-0 400 watts peak pulse power capability with a 10 / 1000 us waveform (300W above 78V) Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free XX = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 12mm tape per EIA Std RS-481 Y = Year Weight: 0.064 gram M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Symbol Value Unit Type Number Peak Power Dissipation at T =25, Tp=1ms(Note 1) P 400 Watts A PK Steady State Power Dissipation P 1 Watts D Peak Forward Surge Current, 8.3ms Single Half I Sine-wave Superimposed on Rated Load 40 Amps FSM (JEDEC method) (Note 2) Maximum Instantaneous Forward Voltage at 25.0A for V 3.5 Volts F Unidirectional Only Operating and Storage Temperature Range T , T -55 to +150 J STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: Mounted on 5 x 5mm Copper Pads to Each Terminal Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types SMAJ5.0 through Types SMAJ188 2. Electrical Characterstics Apply in Both Directions Version:G11RATINGS AND CHARACTERISTIC CURVES (SMAJ SERIES) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 TA = 25 10 75 50 1 25 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) tp, PULSE WIDTH, (uS) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 50 140 tr=10usec as the POINT WHERE the PEAK 8.3mS Single Half Sine Wave CURRENT DECAYS to 50% OF IPPM JEDEC Method 120 Peak Value 40 IPPM 100 Half Value-IPPM/2 30 80 10/1000usec, WAVEFORM as DEFINED by R.E.A. 60 20 40 10 20 td 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 MEASURED AT 1000 ZERO BIAS 100 MEASURED at TA=25 STAND-OFF f=1.0MHz VOLTAGE,Vwm Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Version:G11 P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PEAK PULSE CURRENT (%) PPM IFSM, PEAK FORWARD SURGE A PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP CURRENT (A) DERATING IN PERCENTAGE (%)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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