SMBJ160A Taiwan Semiconductor

SMBJ160A electronic component of Taiwan Semiconductor
SMBJ160A Taiwan Semiconductor
SMBJ160A ESD Protection Diodes / TVS Diodes
SMBJ160A  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SMBJ160A ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMBJ160A ESD Protection Diodes / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.SMBJ160A
Manufacturer:Taiwan Semiconductor
Category:ESD Protection Diodes / TVS Diodes
Description:ESD Suppressors / TVS Diodes 600W 187.5V 5% Unidi rectional TVS
Datasheet:SMBJ160A Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
6000: USD 0.1011 ea
Line Total: USD 606.6 
Availability : 0
  
QtyUnit Price
6000$ 0.1011
9000$ 0.0923
15000$ 0.0914
21000$ 0.0904
30000$ 0.0896
75000$ 0.0886
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.1011
9000$ 0.0923
15000$ 0.0914
21000$ 0.0904
30000$ 0.0896
75000$ 0.0886


Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6437
10$ 0.3963
100$ 0.2424
500$ 0.1793
1000$ 0.1573
3000$ 0.1364
6000$ 0.1122
9000$ 0.1089
24000$ 0.1089

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
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We are delighted to provide the SMBJ160A from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBJ160A and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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SMBJ5V0(C)A SMBJ170(C)A Taiwan Semiconductor 600W Transient Voltage Suppressor FEATURES Glass passivated junction 600W peak pulse power capability on 10/1000s waveform Excellent clamping capability Low-Incremental surge resistance Fast response time: Typically less than 1.0ps from 0V to BV minimum for unidirectional and 5.0ns for bidirectional Typical I less than 1A above 10V R UL certificate E258596 SMB/DO-214AA Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical chatacteristics apply in both directions suitable for bi-directional applications. ABSOLUTE MAXIMUM RATINGS Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation t =1ms P 600 W p PPM Peak pulse current on 10/1000s waveform I see table A PPM Non-Repetitive Peak Forward Surge Current (1) I 100 A FSM Superimposed on Rated Load (JEDEC Method) T -55 to +150 C Junction temperature J T -55 to +150 C Storage temperature STG Note: 1. Measured on 8.3ms single half-sine wave duty cycle = 4 pulses per minute maximum. 1 Version: B1910 SMBJ5V0(C)A SMBJ170(C)A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Breakdown Reverse Reverse Test Clamping Voltage Uni-directional Stand-Off Peak Pulse Leakage Part Current Voltage V Bi-directional (C) (2) Voltage BR Current Current Marking I at I T PPM (V) Device V I (A) at V RWM PPM RWM (mA) V (V) C (3) (V) I (A) R Min. Max. SMBJ5V0(C)A KE 5.0 6.4 7 10 9.2 65.2 800 SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800 SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500 SMBJ7V0(C)A KM 7.0 7.78 8.6 10 12.0 50 200 SMBJ7V5(C)A KP 7.5 8.33 9.21 1 12.9 46.5 100 SMBJ8V0(C)A KR 8.0 8.89 9.83 1 13.6 44.1 50 SMBJ8V5(C)A KT 8.5 9.44 10.4 1 14.4 41.7 20 SMBJ9V0(C)A KV 9.0 10 11.1 1 15.4 39 10 SMBJ10(C)A KX 10 11.1 12.8 1 17.0 35.3 5 SMBJ11(C)A KZ 11 12.2 13.5 1 18.2 33 5 SMBJ12(C)A LE 12 13.3 14.7 1 19.9 30.2 5 SMBJ13(C)A LG 13 14.4 15.9 1 21.5 27.9 5 SMBJ14(C)A LK 14 15.6 17.2 1 23.2 25.9 5 SMBJ15(C)A LM 15 16.7 18.5 1 24.4 24.6 5 SMBJ16(C)A LP 16 17.8 19.7 1 26.0 23.1 5 SMBJ17(C)A LR 17 18.9 20.9 1 27.6 21.7 5 SMBJ18(C)A LT 18 20 22.1 1 29.2 20.5 5 SMBJ20(C)A LV 20 22.2 24.5 1 32.4 18.5 5 SMBJ22(C)A LX 22 24.4 26.9 1 35.5 16.9 5 SMBJ24(C)A LZ 24 26.7 29.5 1 38.9 15.4 5 SMBJ26(C)A ME 26 28.9 31.9 1 42.1 14.3 5 SMBJ28(C)A MG 28 31.1 34.4 1 45.4 13.2 5 SMBJ30(C)A MK 30 33.3 36.8 1 48.4 12.4 5 SMBJ33(C)A MM 33 36.7 40.6 1 53.3 11.3 5 SMBJ36(C)A MP 36 40 44.2 1 58.1 10.3 5 SMBJ40(C)A MR 40 44.4 49.1 1 64.5 9.3 5 SMBJ43(C)A MT 43 47.8 52.8 1 69.4 8.6 5 SMBJ45(C)A MV 45 50 55.3 1 72.7 8.3 5 SMBJ48(C)A MX 48 53.3 58.9 1 77.4 7.8 5 SMBJ51(C)A MZ 51 56.7 62.7 1 82.4 7.3 5 SMBJ54(C)A NE 54 60 66.3 1 87.1 6.9 5 SMBJ58(C)A NG 58 64.4 71.2 1 93.6 6.4 5 SMBJ60(C)A NK 60 66.7 73.7 1 96.8 6.2 5 SMBJ64(C)A NM 64 71.1 78.6 1 103 5.8 5 SMBJ70(C)A NP 70 77.8 86 1 113 5.3 5 SMBJ75(C)A NR 75 83.3 92.1 1 121 5 5 SMBJ78(C)A NT 78 86.7 95.8 1 126 4.8 5 2 Version: B1910

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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