Product Information

TSM1N60CP

TSM1N60CP electronic component of Taiwan Semiconductor

Datasheet
MOSFET, N, 600V, D-PAK
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6305 ea
Line Total: USD 0.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1

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TSM1N60CP
Taiwan Semiconductor

5 : USD 0.5072
10 : USD 0.4171
100 : USD 0.3621
500 : USD 0.3156
1000 : USD 0.3061
5000 : USD 0.2886

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Alternate Case Style
Application Code
Current Id Max
Current Temperature
External Depth
External Length / Height
External Width
Full Power Rating Temperature
No. Of Transistors
On State Resistance Max
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Reverse Recovery Time Trr Typ
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
Voltage Vgs Th Min
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Additional Infomation About Product

TSM1N60 N-Channel Power Enhancement Mode MOSFET V = 600V Pin assignment: DS 1. Gate I = 1A D 2. Drain R , Vgs 10V, Ids 0.6A = 8 DS (on) 3. Source General Description The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Robust high voltage termination Source to Drain diode recovery time comparable to a Avalanche energy specified discrete fast recovery diode. Diode is characterized for use in bridge circuits I and V specified at elevated temperature DSS DS(on) Block Diagram Ordering Information Part No. Packing Package TSM1N60CP Tape & Reel TO-252 TSM1N60CH Tube TO-251 o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 600V V DS Gate-Source Voltage V 30 V GS Continuous Drain Current I 1 A D Pulsed Drain Current I 9 A DM o Maximum Power Dissipation Ta = 25C 50 P W D o o Ta > 25 C 0.4 W/ C o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Single Pulse Drain to Source Avalanche Energy E 20 mJ AS (V = 100V, V =10V, I =2A, L=10mH, R =25) DD GS AS G Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8 from case) T 10 S L o Junction to Ambient Thermal Resistance (PCB mounted) Rja 62.5 C/W Note: Surface mounted on FR4 board t<=10sec. TSM1N60 1-4 2003/12 rev. E Electrical Characteristics o Tj = 25 C, unless otherwise noted Parameter Conditions SymbolMin Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 600 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 0.6A R -- -- 8.0 GS D DS(ON) Gate Threshold Voltage V = V , I = 250uA V 2.0 -- 4.0 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 10 uA DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Forward Transconductance V 50V, I = 0.5A g -- 10 -- S DS D fs Dynamic Total Gate Charge V = 400V, I = 1.0A, Q -- 8.5 14 DS D g V = 10V nC Gate-Source Charge Q -- 1.8 -- GS gs Gate-Drain Charge Q -- 4 -- gd Turn-On Delay Time V = 300V, R = 18, t -- 8 DD L d(on) Turn-On Rise Time I = 1A, V = 10V, t -- 21 nS D GEN r R = 6 Turn-Off Delay Time G t -- 18 d(off) Turn-Off Fall Time t -- 24 f Input Capacitance V = 25V, V = 0V, C -- 210 -- DS GS iss f = 1.0MHz pF Output Capacitance C -- 28 -- oss Reverse Transfer Capacitance C -- 4.2 -- rss Source-Drain Diode Max. Diode Forward Current I -- -- 1.0 A S Diode Forward Voltage I = 1.0A, V = 0V V -- -- 1.5 V S GS SD Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. TSM1N60 2-4 2003/12 rev. E

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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