TSM60N900CI Taiwan Semiconductor

TSM60N900CI electronic component of Taiwan Semiconductor
TSM60N900CI Taiwan Semiconductor
TSM60N900CI MOSFETs
TSM60N900CI  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TSM60N900CI MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM60N900CI MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TSM60N900CI
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
Datasheet: TSM60N900CI Datasheet (PDF)
Price (USD)
1: USD 3.475 ea
Line Total: USD 3.48 
Availability : 1982
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 3.475
10$ 2.208
100$ 1.606
500$ 1.386
1000$ 1.21
2000$ 1.199

Availability 1982
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.475
10$ 2.208
100$ 1.606
500$ 1.386
1000$ 1.21
2000$ 1.199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TSM60N900CI from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM60N900CI and other electronic components in the MOSFETs category and beyond.

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TSM60N900 600V, 4.5A, 0.9 N-Channel Power MOSFET Pin Definition: ITO-220 TO-251 Key Parameter Performance 1. Gate (IPAK) 2. Drain Parameter Value Unit 3. Source V 600 V DS R (max) 0.9 DS(on) Q g 9.7 nC TO-252 (DPAK) Block Diagram Features Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Application Power Supply. Lighting Ordering Information Part No. Package Packing N-Channel MOSFET TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube TSM60N900CP ROG TO-252 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit ITO-220 IPAK/DPAK Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS (Note 1) Continuous Drain Current T = 25C I 4.5 A C D (Note 2) Pulsed Drain Current I 13.5 A DM Total Power Dissipation T = 25C P 20 50 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 81 mJ AS (Note 3) Single Pulsed Avalanche Current I 1.8 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG 1/9 Version: B14 TSM60N900 600V, 4.5A, 0.9 N-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit ITO-220 IPAK/DPAK Junction to Case Thermal Resistance R 6.25 2.5 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 3 4 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 GS DS GSS nA Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 2.3A -- 0.72 0.9 Drain-Source On-State Resistance R GS D DS(ON) (Note 5) Dynamic Total Gate Charge Q -- 9.7 -- g V = 380V, I = 2.3A, DS D Gate-Source Charge Q -- 2.3 -- nC gs V = 10V GS Gate-Drain Charge Q -- 3.6 -- gd Input Capacitance C -- 480 -- V = 100V, V = 0V, iss DS GS pF Output Capacitance f = 1.0MHz C -- 36 -- oss Gate Resistance f=1MHz, open drain R -- 3.4 -- g (Note 6) Switching Turn-On Delay Time t -- 12 -- d(on) V = 380V, DD Turn-On Rise Time t -- 16 -- r R = 4.7, ns GEN Turn-Off Delay Time t -- 22 -- d(off) I = 2.3A, V = 10V, D GS Turn-Off Fall Time t -- 12 -- f (Note 4) Source-Drain Diode Forward On Voltage -- -- 1.4 V I =4.5A, V =0V V S GS SD Reverse Recovery Time -- 179 -- ns t rr V =200V, I =2.3A R S Reverse Recovery Charge -- 1.2 -- C dI /dt=100A/s Q F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L=50mH, I =1.8A, V =50V, R =25, Starting T = 25C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/9 Version: B14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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