X-On Electronics has gained recognition as a prominent supplier of EPC2001 across the USA, India, Europe, Australia, and various other global locations. EPC2001 are a product manufactured by TDK. We provide cost-effective solutions for EPC2001, ensuring timely deliveries around the world.

EPC2001 TDK

EPC2001 electronic component of TDK
EPC2001 TDK
EPC2001 Unclassified
EPC2001

Images are for reference only
See Product Specifications
Part No. EPC2001
Manufacturer: TDK
Category: Unclassified
Description: TRANS GAN 100V 25A BUMPED DIE
Datasheet: EPC2001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.7789 ea
Line Total: USD 8.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1
Multiples : 1
1 : USD 8.7789
10 : USD 7.554
100 : USD 6.1942

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the EPC2001 from our TDK manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EPC2001 and other electronic components in the TDK manufacturer and beyond.

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eGaN FET DATASHEET EPC2001 EPC2001 Enhancement Mode Power Transistor NEW PRODUCT V , 100 V DSS EFFICIENT POWER CONVERSION R , 7 mW DS(ON) I , 25 A D HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag- ing the infrastructure that has been developed over the last 55 years. GaNs exceptionally high elec- tron mobility and low temperature coefficient allows very low R , while its lateral device structure DS(ON) and majority carrier diode provide exceptionally low Q and zero Q . The end result is a device that G RR can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. EPC2001 eGaN FETs are supplied only in passivated die form with solder bars Maximum Ratings Applications Drain-to-Source Voltage (Continuous) 100 V V DS High S peed DC-DC conversion Drain-to-Source Voltage (up to 10,000 5ms pulses at 125 C) 120 V Class D Audio Hard Switched and High Frequenc y Circ uits Continuous (T = 25C, = 13) 25 A JA I A D Pulsed (25C, Tpulse = 300 s) 100 Benefits Ultra High Efficienc y Gate-to-Source Voltage 6 V V GS Ultra Low R DS(on) Gate-to-Source Voltage -5 Ultra low Q G Ultra small footprint T Operating Temperature -40 to 125 J C T Storage Temperature -40 to 150 STG PARAMETER TEST CONDITIONS MINTYP MAX UNIT Static Characteristics (T = 25C unless otherwise stated) J BV Drain-to-Source VoltageV = 0 V, I = 300 A 100 V DSS GS D I Drain Source LeakageV = 80 V, V = 0 V 100 250 A DSS DS GS Gate-Source Forward LeakageV = 5 V1 5 GS I mA GSS Gate-Source Reverse LeakageV = -5 V 0.2 1 GS V Gate Threshold VoltageV = V , I = 5 mA 0.7 1.4 2.5 V GS(th) DS GS D R Drain-Source On ResistanceV = 5 V, I = 25 A 5.6 7m DS(ON) GS D Source-Drain Characteristics (T = 25C unless otherwise stated) J I = 0.5 A, V = 0 V, T = 25C 1.75 S GS V Source-Drain Forward Voltage V SD I = 0.5 A, V = 0 V, T = 125C 1.8 S GS All measurements were done with substrate shorted to source. Thermal Characteristics TYP R Thermal Resistance, Junction to Case 2.1 C/W JC R Thermal Resistance, Junction to Board 15 C/W JB R Thermal Resistance, Junction to Ambient (Note 1) 54 C/W JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC2001 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Dynamic Characteristics (T = 25C unless otherwise stated) J C Input Capacitance 850 950 ISS C Output Capacitance V = 50 V, V = 0 V 450 525 pF OSS DS GS C Reverse Transfer Capacitance 20 30 RSS Q Total Gate Charge (V = 5 V) 8 10 G GS Q Gate to Drain Charge V = 50 V, I = 25 A 2.2 2.7 GD DS D Q Gate to Source Charge 2.3 2.8 nC GS Q Output Charge V = 50 V, V = 0 V 35 40 DS GS OSS Q Source-Drain Recovery Charge 0 0 RR All measurements were done with substrate shorted to source. Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics 100 100 25C 90 125C 80 80 V = 3V DS 70 V = 5 GS V = 4 60 GS 60 V = 3 GS 50 V = 2 GS 40 40 30 20 20 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V Drain to Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Figure 3: R vs V for Various Current Figure 4: R vs V for Various Temperature DS(on) GS DS(on) GS 20 20 I = 10 A D 18 25C I = 20 A D 125C I = 40 A 16 D 15 ID = 25 A I = 80 A D 14 12 10 10 8 6 5 4 2 0 0 2 2.5 3 3.5 4 4.5 5 5.5 2 2.5 3 3.5 4 4.5 5 5.5 V Gate to Source Voltage (V) GS V Gate-to-Source Voltage (V) GS Figure 5: Capacitance Figure 6: Gate Charge 1.4 EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT 2013 5 PAGE 2 COSS = CGD + CSD I = 25 A D 4.5 1.2 V = 50 V C = C + C DS ISS GD GS 4 C = C RSS GD 1 3.5 3 0.8 2.5 0.6 2 1.5 0.4 1 0.2 0.5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 V Drain to Source Voltage (V) Q Gate Charge (nC) DS G I Drain Current (A) D R Drain to Source Resistance (m) C Capacitance (nF) DS(ON) V Gate to Source Voltage (V) R Drain to Source Resistance (m) I Drain Current (A) GS DS(ON) D

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