eGaN FET DATASHEET EPC8010 EPC8010 Enhancement Mode Power Transistor D V , 100 V DS G EFFICIENT POWER CONVERSION R , 160 m DS(on) I , 4 A HAL D S Gallium Nitrides exceptionally high electron mobility and low temperature coefficient allows very low R , while its lateral device structure and majority carrier diode provide exceptionally low Q DS(on) G and zero Q . The end result is a device that can handle tasks where very high switching frequency, RR and low on-time are beneficial as well as those where on-state losses dominate. EPC8010 eGaN FETs are supplied only in Maximum Ratings passivated die form with solder bars PARAMETER VALUE UNIT Die Size: 2.1 mm x 0.85 mm V Drain-to-Source Voltage (Continuous) 100 V DS Applications Continuous (T = 25C, R = 27C/W) 4 A JA I A D Ultra High Speed DC-DC Conversion Pulsed (25C, T = 300 s) 7.5 PULSE RF Envelope Tracking Gate-to-Source Voltage 6 V V GS Wireless Power Transfer Gate-to-Source Voltage 4 Game Console and Industrial Movement T Operating Temperature 40 to 150 J C Sensing (LiDAR) T Storage Temperature 40 to 150 STG Benefits Ultra High Efficiency Ultra Low R Thermal Characteristics DS(on) Ultra Low Q G PARAMETER TYP UNIT Ultra Small Footprint R Thermal Resistance, Junction-to-Case 8.2 JC R Thermal Resistance, Junction-to-Board 16 C/W JB R Thermal Resistance, Junction-to-Ambient (Note 1) 82 JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC8010 Dynamic Characteristics (T = 25C unless otherwise stated) J PARAMETER TEST CONDITIONS MIN TYP MAX UNIT C Input Capacitance 43 55 ISS pF C Output Capacitance V = 50 V, V = 0 V 25 36 OSS DS GS C Reverse Transfer Capacitance 0.3 0.5 RSS R Gate Resistance 0.3 G Q Total Gate Charge V = 50 V, V = 5 V, I = 1 A 360 480 G DS GS D Q Gate-to-Source Charge 130 GS Q Gate-to-Drain Charge V = 50 V, I = 1 A 60 100 GD DS D pC Q Gate Charge at Threshold 100 G(TH) Q Output Charge V = 50 V, V = 0 V 2200 3300 OSS DS GS Q Source-Drain Recovery Charge 0 RR Specifications are with substrate connected to source where applicable. Figure 1: Typical Output Characteristics at 25C Figure 2: Transfer Characteristics 25C V = 5 V 125C GS V = 4 V GS V = 3 V DS V = 3 V GS V = 2 V GS 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Figure 3: R vs. V for Various Drain Currents Figure 4: R vs. V for Various Temperatures DS(on) GS DS(on) GS I = 0.5 A D 25C I = 1 A D 125C I = 1.5 A D I = 1 A D I = 2 A D 2.5 3.0 3.5 4.0 4.5 5.0 2.5 3.0 3.5 4.0 4.5 5.0 V Gate-to-Source Voltage (V) GS V Gate-to-Source Voltage (V) GS EPC THE LEADER IN GaN TECHNOLOGY WWW.EPC-CO.COM COPYRIGHT 2019 2 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 500 500 400 400 300 300 200 200 100 100 0 0 R Drain-to-Source Resistance (m) I Drain Current (A) D DS(on) R Drain-to-Source Resistance (m) I Drain Current (A) D DS(on)