Product Information

TDM3736

TDM3736 electronic component of Techcode

Datasheet
MOSFET N Trench 100V 112A (Tc) 4V @ 250uA 4.2 mO @ 20A,10V PQFN-8_5x6mm RoHS

Manufacturer: Techcode
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8575 ea
Line Total: USD 1.86

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

TDM3736
Techcode

1 : USD 1.8575
10 : USD 1.5362
30 : USD 1.3049
100 : USD 1.1125
500 : USD 1.0785
1000 : USD 1.0639

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The Techcode TDM3736 is an N-Channel MOSFET Trench 100V 112A (Tc) 4V @ 250uA 4.2 mO @ 20A,10V PQFN-8_5x6mm RoHS with industry leading performance specifically designed for high current applications. It features a package size of 8 x 6 mm and a thickness of 0.51 mm, providing excellent thermal performance for reliable operations. This MOSFET supports a gate source voltage of ±20V and a gate charge of 110nC. It offers a high current rating of 112A and a maximum drain-source voltage of 100V. The built-in avalanche energy down-swing of 7.3mJ makes it highly efficient in terms of power consumption. Its rapid drain-source recovery time and low on-resistance are among the strongest features of this device, making it suitable for a wide range of applications such as DC-DC converters, switching regulators Motors, drives, and more. It is RoHS compliant and meets the environmental requirements of most markets.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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