Product Information

TDM3742

TDM3742 electronic component of Techcode

Datasheet
MOSFET N Trench 80V 180A (Tc) 4V @ 250uA 3.6 mΩ @ 20A,10V TO-263 RoHS

Manufacturer: Techcode
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6584 ea
Line Total: USD 2.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

TDM3742
Techcode

1 : USD 2.6584
10 : USD 2.1983
30 : USD 1.8673
100 : USD 1.5922
500 : USD 1.5459
1000 : USD 1.524

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TDM3742 is a N-Channel Mosfet transistor with a trench 80V 180A (Tc) 4V @ 250uA 3.6 mO @ 20A, 10V TO-263 RoHS manufactured by Techcode. It is an electronic component used to perform a variety of tasks, ranging from increasing or decreasing electrical current to biasing transistors and amplifying signals. It is specially designed to provide high switching frequencies under low on-state resistance. This makes it ideal for high-speed, low-loss operations such as power switching and pre-driver applications. Its low on-state resistance also improves efficiency and overall power consumption. Its high breakdown voltage of 80V guarantees reliable operation even at high loads. Furthermore, its small TO-263 form factor makes it easier to mount, allowing for a more compact footprint with reduced board space. The TDM3742 is RoHS compliant and is a great choice for high-frequency, low-loss, power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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