2N7002KDW TECH PUBLIC

2N7002KDW electronic component of TECH PUBLIC
2N7002KDW TECH PUBLIC
2N7002KDW MOSFETs
2N7002KDW  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7002KDW MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002KDW MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.2N7002KDW
Manufacturer:TECH PUBLIC
Category:MOSFETs
Description: SOT-363 MOSFETs ROHS
Datasheet:2N7002KDW Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
20: USD 0.0674 ea
Line Total: USD 1.35 
Availability : 116
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
20$ 0.0674
200$ 0.0522
600$ 0.0327
3000$ 0.026
9000$ 0.0231
21000$ 0.0215
  

Availability116
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0674
200$ 0.0522
600$ 0.0327
3000$ 0.026
9000$ 0.0231
21000$ 0.0215

   
Manufacturer
Product Category
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We are delighted to provide the 2N7002KDW from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002KDW and other electronic components in the MOSFETs category and beyond.

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The 2N7002KDW is a SOT-363 MOSFET manufactured by TECH PUBLIC. This component is a low-voltage, low-power, N-channel enhancement-mode MOSFET, which is optimized for use in power management and level shifting applications. The device features a breakdown voltage of 8 V, an on-state resistance of 0.6 O max, and an operating temperature range from -55°C to +150°C. It is packaged in a RoHS-compliant SOT-363 surface-mount package and its RoHS-compliant construction makes it suitable for use in lead-free and other RoHS-compliant applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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