Product Information

XP202A0003MR-G

XP202A0003MR-G electronic component of Torex Semiconductor

Datasheet
MOSFET Power MOSFET -30V 3A P-Type SOT-23

Manufacturer: Torex Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1
Multiples : 1

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XP202A0003MR-G
Torex Semiconductor

1 : USD 2.3819
10 : USD 1.021
100 : USD 0.5633
500 : USD 0.4795
1000 : USD 0.3842
3000 : USD 0.3376
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0 - WHS 2

MOQ : 1
Multiples : 1

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XP202A0003MR-G
Torex Semiconductor

1 : USD 1.0964
25 : USD 0.8698
28 : USD 0.5686
76 : USD 0.5387
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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XP202A0003MR-G ETR1128-004 P-channel 4V (G-S) MOSFET FEATURES APPLICATIONS Low On Resistance Switching Ultra High Speed Switching -4V Driving EU RoHS Compliant, Pb Free PRODUCT NAME ORDER UNIT PRODUCT NAME PACKAGE 3,000/Reel XP202A0003MR-G SOT-23 * The -G suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION PARMETER SYMBOL RATINGS UNITS Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (DC) I -3 A D ( 1) Drain Current(Pulse) * I -12 A DP ( 2) 1. Gate Channel Power Dissipation * Pd 1 W 2. Source Channel Temperature Tch +150 3. Drain Storage Temperature Tstg - 55 ~ +150 SOT-23(TOP VIEW ( 1) * PW10s,duty cycle1% ( 2) * Ceramic Board (900mm20.8mm) Mounting ELECTRICAL CHARACTERISTICS LIMITS PARAMETER SYMBOL TEST CONDITIONS UNITS MIN. TYP. MAX. Drain-Source Breakdown Voltage V I =-1mA, V=0V -30 - - V (BR)DSS D GS Drain-Source Cut-Off Current I V =-30V, V=0V - - -1 A DSS DS GS Gate-Source Leakage Current I V=16V,VDS=0V - - 10 A GSS GS Gate-Source Cut-Off Voltage V V=-10V,ID=-1mA -1.2 - -2.6 V GS(off) DS Forward Transfer Admittance yfs V=-10V,ID=-3A - 8.0 - S DS R1 I=-1.5A,VGS=-10V - 45 - m DS(ON) D Drain-Source ON Resistance R2 I=-1.0A,VGS=-4.5V - 67 - m DS(ON) D R3 I=-1.0A,VGS=-4V - 76 - m DS(ON) D Input Capacity Ciss V=-10V,f=1MHz - 435 - pF DS Output Capacity Coss V=-10V,f=1MHz - 110 - pF DS Feedback capacity Crss V=-10V,f=1MHz - 85 - pF DS Turn on Delay time td(on) ID=-1A - 6 - ns Rise Time tr I =-1A - 12 - ns D Turn off Delay Time td(off) ID=-1A - 28 - ns Fall Time tf I =-1A - 10 - ns D All Gate Charge Amount Qg VDS=-15V, VGS=-10V, ID=-3A - 10 - nC Gate Source Charge Amount Qgs V =-15V, V =-10V, I =-3A - 1.2 - nC DS GS D Gate Drain Charge Amount Qgd VDS=-15V, VGS=-10V, ID=-3A - 2.2 - nC Diode Forward Voltage V I =-3A, V=0V - -0.8 -1.2 V SD S GS 1/5 XP202A0003MR-G SWITCHING-TIME TEST CIRCUIT 0V 90% S 50 VI VI 10 % G 0V 90% 90 % D VO VO Oscilloscope 10% 10% RL td(o ff) tf td(o n) t r Oscilloscope PACKAGING INFORMATION EQUIVALENT CIRCUIT SOT-23 MARKING RULE represents product series 3 MARK PRODUCT SERIES 6 XP202*******-G represents product group and number MARK PRODUCT PRODUCT 12 PRODUCT SERIES GROUP NUMBER A D 00 03 XP202A0003**-G represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ repeated (G, I, J, O, Q, W excluded) 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
TOREX
Torex Semicon
Torex Semiconductor Ltd

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