XP231N0201TR-G Torex Semiconductor

XP231N0201TR-G electronic component of Torex Semiconductor
XP231N0201TR-G Torex Semiconductor
XP231N0201TR-G MOSFETs
XP231N0201TR-G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of XP231N0201TR-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP231N0201TR-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. XP231N0201TR-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET N-CHANNEL 30V 0.2A
Datasheet: XP231N0201TR-G Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8285
10$ 0.668
100$ 0.1133
500$ 0.0912
1000$ 0.0632
3000$ 0.058
N/A

   
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We are delighted to provide the XP231N0201TR-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP231N0201TR-G and other electronic components in the MOSFETs category and beyond.

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XP231N0201TR-G ETR11041-001a N-channel MOSFET 30V, 0.2A FEATURES APPLICATIONS On-State Resistance : R (on)5.0 V =4.5V DS GS Switching Driving voltage : 2.5V Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION EQUIVALENT CIRCUIT SOT-23(TO-236) Drain 3 1 2 Gate Source PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP231N0201TR-G * SOT-23(TO-236) 3,000 pcs/ Reel * The -G suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 30 V DSS Gate-Source Voltage VGSS 20 V Drain Current (DC) ID 0.2 A (*1) Drain Current(Pulse) I 0.4 A DP (*2) Channel Power Dissipation Pd 0.4 W Junction Temperature T 150 J Storage Temperature T -55~150 stg (*1) PW 10s,duty cycle1% (*2) When implemented on a PCB defined by JESD51-7 1/6 XP231N0201TR-G ELECTRICAL CHARACTERISTICS Ta=25 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage V I = 250A, V = 0V 30 - - V (BR)DSS D GS Drain-Source Leakage Current I V = 30V, V = 0V - - 1 A DSS DS GS Gate-Source Leakage Current IGSS VGS= 20V, VDS= 0V - - 10 A Gate Threshold Voltage V I = 250uA, V = V 0.8 1.3 1.8 V GS(off) D DS GS VGS= 4.5V, ID= 10mA - 3 5 Drain-Source On Resistance RDS(on) VGS= 2.5V, ID= 10mA - 5.5 11 Input Capacitance Ciss - 6.5 - pF VDS= 10V, VGS= 0V Output Capacitance Coss - 2.5 - pF f= 1MHz Reverse Transfer Capacitance Crss - 1.2 - pF Turn-on Delay Time t - 7 - ns d(on) Rise Time tr V = 10V, I = 100mA - 5 - ns DD D Turn-off Delay Time t VGS= 10V - 20 - ns d(off) Fall Time t - 8 - ns f Total Gate Charge Qg - 0.18 - nC V = 10V, I = 100mA DS D Gate-Source Charge Q - 0.03 - nC gs VGS= 10V Gate-Drain Charge Q - 0.08 - nC gd Diode Forward Voltage VSD IS= 100mA, VGS= 0V - 0.8 1.2 V NOTES ON USE 1. Please use this IC within the absolute maximum ratings. Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 2. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Torex Semicon
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