Product Information

1SV304TPH3F

1SV304TPH3F electronic component of Toshiba

Datasheet
Varactor Diodes 10V C1=17.3-19.3pF
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.437 ea
Line Total: USD 0.44

10312 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10312 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

1SV304TPH3F
Toshiba

1 : USD 0.437
10 : USD 0.3105
100 : USD 0.1403
1000 : USD 0.1138
3000 : USD 0.1012

2910 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

1SV304TPH3F
Toshiba

3000 : USD 0.1754

3880 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 197
Multiples : 1

Stock Image

1SV304TPH3F
Toshiba

197 : USD 0.1882
211 : USD 0.175
500 : USD 0.1544
1000 : USD 0.1471
2000 : USD 0.1446

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Termination Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Configuration
Packaging
Brand
Applications Frequency Range
Minimum Tuning Ratio
Factory Pack Quantity :
Tuning Ratio Test Condition
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio Unit: mm Small package High capacitance ratio: C / C = 3.0 (typ.) 1V 4V Low series resistance: r = 0.27 (typ.) s Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1E1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.004 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 17.3 18.3 19.3 pF 1V R Capacitance C V = 4 V, f = 1 MHz 5.3 6.1 6.6 pF 4V R Capacitance ratio C / C 2.8 3 1V 4V Series resistance r V = 1 V, f = 470 MHz 0.27 0.32 s R Marking Start of commercial production 1997-03 1 2014-03-01 1SV304 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 (Note)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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