Product Information

1SV308,L3F

1SV308,L3F electronic component of Toshiba

Datasheet
PIN Diodes Radio-Freq Switch 30V 0.3pF 1.1ohm
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5805 ea
Line Total: USD 0.58

2120 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1497 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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1SV308,L3F
Toshiba

1 : USD 0.4174
10 : USD 0.2749
100 : USD 0.1184
1000 : USD 0.092
2500 : USD 0.0748
8000 : USD 0.0644
48000 : USD 0.0598
96000 : USD 0.0587

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

1SV308 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV308 VHF Tuner Band Switch Applications Unit: mm Small package. Low series resistance: r = 1.1 (typ.) s Small total capacitance: C = 0.3 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 30 V R Forward current I 50 mA F Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1G1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.0014 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 10 A 30 V R R Reverse current I V = 30 V 0.1 A R R Forward voltage V I = 50 mA 0.95 1.0 V F F Total capacitance C V = 1 V, f = 1 MHz 0.3 0.5 pF T R Series resistance 1 r I = 10 mA, f = 100 MHz 1.0 1.5 s (1) F Series resistance 2 r I = 10 mA, f = 1.5 GHz 1.1 s (2) F Marking Start of commercial production 1997-04 1 2014-03-01 1SV308 2 2014-03-01

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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