Product Information

1SV323(TPH3,F)

1SV323(TPH3,F) electronic component of Toshiba

Datasheet
Diode VAR Cap Single 10V 26.5pF 2-Pin ESC T/R
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3069 ea
Line Total: USD 1.53

3865 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
3860 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 5
Multiples : 5
5 : USD 0.15
50 : USD 0.1201
150 : USD 0.1051
500 : USD 0.0941
2500 : USD 0.0851
4000 : USD 0.0806

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Configuration
Packaging
Brand
Package Type
Pin Count
Type
Operating Temperature Classification
Tuning Ratio
Tuning Ratio Test Condition
Rad Hardened
Deleted
LoadingGif

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Additional Infomation About Product

1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO/VCO Unit: mm High capacitance ratio: C / C = 4.3 (typ.) 1V 4V Low series resistance: r = 0.4 (typ.) s Useful for small size tuner. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1G1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.0014 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 26.5 29.5 pF 1V R Capacitance C V = 4 V, f = 1 MHz 6.0 7.1 pF 4V R Capacitance ratio C / C 4.0 4.3 1V 4V Series resistance r V = 4 V, f = 100 MHz 0.4 0.8 s R Note: Signal level when capacitance is measured: V = 500 mVrms sig Marking Start of commercial production 1999-03 1 2014-03-01 1SV323 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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