Product Information

2SK209-BL(TE85L,F)

2SK209-BL(TE85L,F) electronic component of Toshiba

Datasheet
JFET N-Ch 10mA -50V FET 150 mW Audio LNA

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

153: USD 0.2411 ea
Line Total: USD 36.89

7568 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 153  Multiples: 1
Pack Size: 1
Availability Price Quantity
3180 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 0.91
5 : USD 0.3796
25 : USD 0.3432
57 : USD 0.2847
155 : USD 0.2691

7568 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 153
Multiples : 1
153 : USD 0.2411
200 : USD 0.2398
500 : USD 0.1941
1000 : USD 0.1824
3000 : USD 0.1685

3553 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 191
Multiples : 1
191 : USD 0.4805
250 : USD 0.4663
500 : USD 0.4569

     
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Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
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Minimum Operating Temperature
Maximum Operating Temperature
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2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
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TOSHIBA SEMICONDUCTORS
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