Product Information

DF2B18FU,H3F

DF2B18FU,H3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Protection Diode SNG Bi-directional

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.424 ea
Line Total: USD 0.42

1 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

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DF2B18FU,H3F
Toshiba

1 : USD 0.0387

     
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DF2B18FU ESD Protection Diodes Silicon Epitaxial Planar DF2B18FU 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) 3. Packaging and Internal Circuit 1: Pin 1 2: Pin 2 USC 4. Orderable part number Orderable part number AEC-Q101 Note DF2B18FU,H3F General Use DF2B18FU,H3XGF YES (Note 1) Unintended Use (Note 1) DF2B18FU,H3XHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2015-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0DF2B18FU 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V (Note 1) 30 kV ESD Electrostatic discharge voltage(IEC61000-4-2)(Air) Electrostatic discharge voltage(ISO10605)(Contact) V (Note 2) 30 kV ESD Electrostatic discharge voltage(ISO10605)(Air) Peak pulse power P 80 W PK Peak pulse current I (Note 3) 2.5 A PP Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to ISO10605. ( C = 330 pF, R = 2 k ) Note 3: According to IEC61000-4-5. 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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