DF2B29FU,H3F Toshiba

DF2B29FU,H3F electronic component of Toshiba
DF2B29FU,H3F Toshiba
DF2B29FU,H3F ESD Suppressors / TVS Diodes
DF2B29FU,H3F  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DF2B29FU,H3F ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF2B29FU,H3F ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

Part No. DF2B29FU,H3F
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD Protection Diode SNG Bi-directional
Datasheet: DF2B29FU,H3F Datasheet (PDF)
Price (USD)
3000: USD 0.1083 ea
Line Total: USD 324.9 
Availability : 0
  
QtyUnit Price
3000$ 0.1083
6000$ 0.1039
9000$ 0.1036
12000$ 0.1033
15000$ 0.1029
21000$ 0.1026
24000$ 0.1024
30000$ 0.1021
75000$ 0.1019

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1083
6000$ 0.1039
9000$ 0.1036
12000$ 0.1033
15000$ 0.1029
21000$ 0.1026
24000$ 0.1024
30000$ 0.1021
75000$ 0.1019


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8779
10$ 0.6479
100$ 0.1531
500$ 0.1009
1000$ 0.0796
3000$ 0.0606

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DF2B29FU,H3F from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF2B29FU,H3F and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF2B29FU ESD Protection Diodes Silicon Epitaxial Planar DF2B29FU 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) 3. Packaging and Internal Circuit 1: Pin 1 2: Pin 2 USC 4. Orderable part number Orderable part number AEC-Q101 Note DF2B29FU,H3F General Use DF2B29FU,H3XGF YES (Note 1) Unintended Use (Note 1) DF2B29FU,H3XHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2015-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0DF2B29FU 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V (Note 1) 25 kV ESD Electrostatic discharge voltage(IEC61000-4-2)(Air) Electrostatic discharge voltage(ISO10605)(Contact) V (Note 2) 30 kV ESD Electrostatic discharge voltage(ISO10605)(Air) Peak pulse power P 140 W PK Peak pulse current I (Note 3) 3 A PP Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to ISO10605. ( C = 330 pF, R = 2 k ) Note 3: According to IEC61000-4-5. 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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