DF2B6.8E,L3F Toshiba

DF2B6.8E TOSHIBA Diodes for Protecting against ESD DF2B6.8E Unit : mm Product for Use Only as Protection against Electrostatic Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Abusolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg *: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimension of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the 1-1G1A TOSHIBA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Weight: 1.4 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/ Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition MinTyp. Max Unit Reverse stand-off voltage V 5.0 V RWM Reverse breakdown voltage V I = 1 mA 5.8 6.8 7.8 V R R Reverse current I V = 5 V 0.5 A R RWM Total capacitance C V = 0 V, f = 1 MHz 15 pF T R Marking Equivalent Circuit (Top View) K1 Start of commercial production 2010-02 1 2014-03-01 DF2B6.8E Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements 2 2014-03-01