DF2B7PCT,L3F Toshiba

DF2B7PCT,L3F electronic component of Toshiba
DF2B7PCT,L3F Toshiba
DF2B7PCT,L3F ESD Protection Diodes / TVS Diodes
DF2B7PCT,L3F  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DF2B7PCT,L3F ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF2B7PCT,L3F ESD Protection Diodes / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. DF2B7PCT,L3F
Manufacturer: Toshiba
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
Datasheet: DF2B7PCT,L3F Datasheet (PDF)
Price (USD)
1: USD 0.1263 ea
Line Total: USD 0.13 
Availability : 26499
  
Ship by Tue. 21 Oct to Thu. 23 Oct
QtyUnit Price
1$ 0.1263
10$ 0.1038
100$ 0.05
500$ 0.0444
1000$ 0.0363
2500$ 0.0352
10000$ 0.0352
20000$ 0.033

Availability 26499
Ship by Tue. 21 Oct to Thu. 23 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1263
10$ 0.1038
100$ 0.05
500$ 0.0444
1000$ 0.0363
2500$ 0.0352
10000$ 0.0352
20000$ 0.033

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DF2B7PCT,L3F from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF2B7PCT,L3F and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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DF2B7PCT ESD Protection Diodes Silicon Epitaxial Planar DF2B7PCT 1. General The DF2B7PCT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B7PCT provides low dynamic resistance and superior protective performance. The DF2B7PCT is housed in an ultra-compact package (1.0 mm 0.6 mm) to meet applications that require a small footprint. 2. Applications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. Features (1) Suitable for use with a 5.0 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 30 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.1 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 16 V I = 27 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.0 mm 0.6 mm size (Nickname: CST2)) 4. Packaging CST2 Start of commercial production 2020-04 2020-2021 2021-03-22 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0DF2B7PCT 5. Example of Circuit Diagram 6. Quick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 45 52 pF t R Dynamic resistance R (Note 2) 0.1 DYN Electrostatic discharge voltage V (Note 3) 30 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 30 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2020-2021 2021-03-22 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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