X-On Electronics has gained recognition as a prominent supplier of DF2S6.8CT,L3F ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF2S6.8CT,L3F ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF2S6.8CT,L3F Toshiba

DF2S6.8CT,L3F electronic component of Toshiba
DF2S6.8CT,L3F Toshiba
DF2S6.8CT,L3F ESD Suppressors / TVS Diodes
DF2S6.8CT,L3F  Circuit Protection

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See Product Specifications
Part No. DF2S6.8CT,L3F
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD protection diode STAND Unidirectional
Datasheet: DF2S6.8CT,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2088 ea
Line Total: USD 0.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 19 Jun to Mon. 23 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2088
10 : USD 0.1841
100 : USD 0.0953
500 : USD 0.0547
1000 : USD 0.0382
2500 : USD 0.0343
10000 : USD 0.0255
20000 : USD 0.0232
50000 : USD 0.022

   
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We are delighted to provide the DF2S6.8CT,L3F from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF2S6.8CT,L3F and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF2S6.8CT ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8CTDF2S6.8CTDF2S6.8CTDF2S6.8CT 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25))) a aaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 30 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-08 2014-04-15 1 Rev.4.0DF2S6.8CT 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa V : Working peak reverse RWM voltage V : Reverse breakdown voltage BR I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 30 Z Z Reverse current I V = 5 V 0.5 A R R Total capacitance C V = 0 V, f = 1 MHz 25 pF t R 5. 5. Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note) 5. 5. Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note) Test Condition ESD Protection IEC61000-4-2 (Contact discharge) 30 kV Note: Criterion: No damage to devices. 2014-04-15 2 Rev.4.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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