Product Information

DF2S6P2CTC,L3F

DF2S6P2CTC,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD protection diode 80A +/-30kV
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1189 ea
Line Total: USD 0.12

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000
10000 : USD 0.1021
20000 : USD 0.1009
50000 : USD 0.0861
100000 : USD 0.0841

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000
10000 : USD 0.0921

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.2341
10 : USD 0.9228
100 : USD 0.23
500 : USD 0.1582
1000 : USD 0.1089
2500 : USD 0.0965
10000 : USD 0.0931
20000 : USD 0.0875
50000 : USD 0.0819

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Packaging
Brand
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

DF2S6P2CTC ESD Protection Diodes Silicon Epitaxial Planar DF2S6P2CTCDF2S6P2CTCDF2S6P2CTCDF2S6P2CTC 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2S6P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S6P2CTC has realized high I , in order to protect a semiconductor devices from the indirect lightning PP stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S6P2CTC is housed in an ultra-compact package (1.6 mm 0.8 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5.0 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 30 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.08 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 18 V I = 80 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.6 mm 0.8 mm size (Nickname: CST2C)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging CST2C Start of commercial production 2018-04 2017-2018 2018-05-09 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0DF2S6P2CTC 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Dynamic resistance R (Note 2) 0.08 DYN Electrostatic discharge voltage V (Note 3) 30 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 16 A and I = 30 A. PP1 PP2 Note 3: Criterion: No damage to devices. 6.1. 6.1. 6.1. 6.1. ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note) Fig. Fig. Fig. Fig. 6.1.16.1.16.1.16.1.1 +8 kV+8 kV+8 kV+8 kV Fig. Fig. Fig. Fig. 6.1.26.1.26.1.26.1.2 -8 kV-8 kV-8 kV-8 kV Fig. Fig. Fig. Fig. 6.1.36.1.36.1.36.1.3 IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2017-2018 2018-05-09 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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