Product Information

DF3A6.8F,LF

Hot DF3A6.8F,LF electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0786 ea
Line Total: USD 0.08

178 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
178 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

DF3A6.8F,LF
Toshiba

1 : USD 0.0786
10 : USD 0.0634
100 : USD 0.052
1000 : USD 0.0493
3000 : USD 0.0446
9000 : USD 0.0413
24000 : USD 0.0406
45000 : USD 0.0406
99000 : USD 0.0406

146 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

DF3A6.8F,LF
Toshiba

1 : USD 0.3301
10 : USD 0.2381
100 : USD 0.0978
1000 : USD 0.069
3000 : USD 0.0552

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF3A6.8F TOSHIBA Diodes For Protecting Against ESD DF3A6.8F Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 150 mW Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-3F1S temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 12 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 3 25 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 45 pF T R (between Cathode and Anode) Start of commercial production 2005-12 1 2017-12-12 DF3A6.8F Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (Top View) 6.8 2 2017-12-12

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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