Product Information

DF5A6.8JE,LM

DF5A6.8JE,LM electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD 4 Circuit 45pF 0.5uA 6.8V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1004 ea
Line Total: USD 0.5

358 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
358 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5

Stock Image

DF5A6.8JE,LM
Toshiba

5 : USD 0.1004
50 : USD 0.0822
150 : USD 0.0731
500 : USD 0.0636

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF5A6.8JE TOSHIBA Diodes for Protecting against ESD DF5A6.8JE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1.CATHODE1 2.ANODE Power dissipation P 100 mW 3.CATHODE2 Junction temperature T 150 C 4.CATHODE3 j 5.CATHODE4 Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 12W1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.003 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 25 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0, f = 1 MHz 45 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2001-02 1 2014-03-01 DF5A6.8JE Marking Equivalent Circuit (Top View) 6.8 CT - VR 100 Ta=25C f=1MHz 10 02 468 REVERSE VOLTAGE VR (V) 2 2014-03-01 TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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