JDP2S02AFS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AFS UHF~VHF Band RF Switch Applications Unit: mm 0.60 .0 5 Suitable for reducing sets size as a result from enabling high-density A mounting due to 2-pin small packages. Low series resistance: r = 1.0 (typ.) s Low capacitance: C = 0.3 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) 0.2 0.1 0.05 0 .0 5 0.0 7 M A Characteristics Symbol Rating Unit +0 .02 Reverse voltage V 30 V 0.4 8 R -0 .03 Forward current I 50 mA F Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 1-1L1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.0006 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 10 A 30 V R R Reverse current I V = 30 V 0.1 A R R Forward voltage V I = 50 mA 0.9 0.94 V F F Capacitance C V = 1 V, f = 1 MHz 0.3 0.4 pF T R Series resistance r I = 10 mA, f = 100 MHz 1.0 1.5 s F Note: Signal level when capacitance is measured. V = 100 mVrms sig Marking 2 Start of commercial production 2002-12 1 2014-03-01 0.1 0.80.0 5 0.1 1 .0 0.0 5JDP2S02AFS C V r I T R s F 3 f = 1 MHz Ta = 25C Ta = 25C 0.5 f = 0.1 GHz Tester: HP4291A 100 1 1.0 1.5 0.5 10 0.3 1.5 1.0 0.5 1 0.1 f = 0.1 GHz 1 3 5 10 30 50 0.5 0.01 0.1 1 10 Reverse voltage V (V) R Forward current I (mA) F 2 2014-03-01 Capacitance C (pF) T Series resistance r () s