X-On Electronics has gained recognition as a prominent supplier of SSM3J356R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J356R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J356R,LF Toshiba

SSM3J356R,LF electronic component of Toshiba
SSM3J356R,LF Toshiba
SSM3J356R,LF MOSFETs
SSM3J356R,LF  Semiconductors

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See Product Specifications
Part No. SSM3J356R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V
Datasheet: SSM3J356R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3026: USD 0.0888 ea
Line Total: USD 268.71 
Availability - 0
MOQ: 3026  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3101
Multiples : 1
3101 : USD 0.0866

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3026
Multiples : 3000
3026 : USD 0.0888
6000 : USD 0.0823
9000 : USD 0.0743
15000 : USD 0.073

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5209
10 : USD 0.371
100 : USD 0.2317
500 : USD 0.1585
1000 : USD 0.1219

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5209
10 : USD 0.371
100 : USD 0.2317
500 : USD 0.1585
1000 : USD 0.1219

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1143
6000 : USD 0.1036
15000 : USD 0.0945
30000 : USD 0.0884
75000 : USD 0.0793
150000 : USD 0.0772

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0808

0
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1714
50 : USD 0.1677
150 : USD 0.1654
500 : USD 0.1629

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.188
10 : USD 0.8694
100 : USD 0.2171
500 : USD 0.1512
1000 : USD 0.1177
3000 : USD 0.0972

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0933
6000 : USD 0.0924
9000 : USD 0.0859
15000 : USD 0.0851
21000 : USD 0.077

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 92
Multiples : 1
92 : USD 0.321
100 : USD 0.1284

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0737
9000 : USD 0.073

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3J356R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J356R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J356R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J356R 1. Applications Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : R = 400 m (max) ( V = -4.0 V) DS(ON) GS R = 300 m (max) ( V = -10 V) DS(ON) GS 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J356R,LF General Use SSM3J356RLXGF YES (Note 1) Unintended Use (Note 1) SSM3J356R,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2015-09 2016-2021 2021-01-15 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0SSM3J356R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -2 A D Drain current (pulsed) (Note 1), (Note 2) I -6 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) 2 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Repetitive rating pulse width limited by maximum channel temperature. Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2021 2021-01-15 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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