SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS VI) SSM3J46CTB Power Management Switch Applications Unit: mm 1.5 V drive Low ON-resistance: R = 250 m (max) ( V = -1.5 V) DS(ON) GS R = 178 m (max) ( V = -1.8 V) DS(ON) GS RDS(ON) = 133 m (max) ( VGS = -2.5 V) RDS(ON) = 103 m (max) ( VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V DSS Gate-Source voltage V 8 V GSS DC I -2.0 D Drain current A Pulse I -4.0 DP Power dissipation P (Note 1) 1000 mW D 1. Gate 2. Source Channel temperature T 150 C ch 3. Drain Storage temperature range T 55 to 150 C CST3B stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1T1A operating temperature/current/voltage, etc.) are within the Weight: 1.5 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking (top view) Pin Condition (top view) Equivalent Circuit 3 1 3 2 S V Polarity mark Polarity mark 1. Gate (on the top) 2. Source 1 2 3. Drain *Electrodes: on the bottom Start of commercial production 2010-02 1 2015-11-26 SSM3J46CTB Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 V Drain-Source breakdown voltage V I = 1 mA, V = 5 V (Note 3) 15 V (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.3 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note 2) 5.2 S fs DS D I = -1.5 A, V = 4.5 V (Note 2) 103 D GS 88.5 I = -1.0 A, V = 2.5 V (Note 2) 107.5 133 D GS Drainsource ON-resistance R m DS (ON) I = -0.5 A, V = 1.8 V (Note 2) 130 178 D GS I = -0.25 A, V = 1.5 V (Note 2) 250 D GS 151 Input capacitance C 290 iss V = 10 V, V = 0 V DS GS Output capacitance C 44 pF oss f = 1 MHz Reverse transfer capacitance Crss 32 Turn-on time t 13.4 on V = 10 V, I = 0.5 A DD D Switching time ns Turn-off time t V = 0 to 2.5 V, R = 4.7 46.2 off GS G Total Gate Charge Q 4.7 g V = 10 V, I = 2.0 A, DD D Gate-Source Charge Q 0.4 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 1.0 gd Drain-Source forward voltage V I = 2.0 A, V = 0 V (Note 2) 0.9 1.2 V DSF D GS Note2: Pulse test Note3: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) VIN 0 V 90% OUT 0 IN 10% 2.5 V (c) VOUT 2.5V R L V DS (ON) 90% 10 s V DD V = -10 V DD 10% V DD R = 4.7 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2015-11-26 R G