SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.10.1 1.70.1 1.8V drive Low ON-resistance: R = 286 m (max) ( V = 1.8V) on GS : R = 167 m (max) ( V = 2.5V) 1 on GS : R = 123 m (max) ( V = 4.0V) on GS 2 3 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 12 V GSS 1. Gate DC I 2.0 D 2. Souce Drain current A Pulse I 4.0 DP 3. Drain UFM P (Note 1) 800 D Drain power dissipation mW (Note 2) 500 P D JEDEC Channel temperature T 150 C ch JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-2U1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 6.6mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Start of commercial production 2007-04 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3K127TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 12 V 18 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 12 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note3) 2.1 4.2 S fs DS D I = 1.0 A, V = 4.0 V (Note3) 93 123 D GS Drainsource ON-resistance R I = 0.8 A, V = 2.5 V (Note3) 115 167 m DS (ON) D GS I = 0.5 A, V = 1.8 V (Note3) 155 286 D GS Input capacitance C 123 iss V = 15V, V = 0 V, f = 1 MHz pF Output capacitance C 43 oss DS GS Reverse transfer capacitance C 18 rss Total Gate Charge Q 1.5 g V = 15V, I = 2.0 A, V = 4 V nC Gate-Source Charge Q 0.9 gs DS D GS Gate-Drain Charge Q 0.6 gd Turn-on time t 9.2 on V = 15 V, I = 1.0 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 6.4 off Drain-Source forward voltage V I = -2.0 A, V = 0 V (Note3) -0.82 -1.2 V DSF D GS Note 3: Pulse test 2 2014-03-01