Product Information

SSM3K36MFV,L3APF(T

SSM3K36MFV,L3APF(T electronic component of Toshiba

Datasheet
MOSFET N Trench 20V 500mA 1V @ 1mA 630 mΩ @ 200mA,5V VESM RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3689 ea
Line Total: USD 0.37

6971 - Global Stock
Ships to you between
Tue. 21 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5596 - WHS 1


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.2047
10 : USD 0.1329
30 : USD 0.1019
100 : USD 0.0636
500 : USD 0.0464
1000 : USD 0.0362

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SSM3K36MFV,L3APF(T is a MOSFET manufactured by Toshiba. It is a N-channel Trench power MOSFET with 20V drain-source voltage and 500mA continuous drain current. It has a 1V drain-source on-state voltage at 1mA and a 630 mO drain-source on-state resistance at a maximum drain current of 200mA. This MOSFET is provided with an 5V VESM gate threshold voltage and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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