SSM5H90ATU Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATUSSM5H90ATUSSM5H90ATUSSM5H90ATU 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Combined an N-channel MOSFET and a diode in one package. 2.1. 2.1. 2.1. 2.1. MOSFET FeaturesMOSFET FeaturesMOSFET FeaturesMOSFET Features (1) Low drain-source on-resistance : R = 65 m (max) ( V = 4.0 V) DS(ON) GS R = 89 m (max) ( V = 2.5 V) DS(ON) GS (2) 2.5-V gate drive voltage. 2.2. 2.2. Diode FeaturesDiode Features 2.2. 2.2. Diode FeaturesDiode Features (1) Low reverse current: I = 0.1 A (typ.) ( V = 30 V) R R 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. 4. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) 4. 4. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) 4.1. 4.1. 4.1. 4.1. Absolute Maximum Ratings of the MOSFET Absolute Maximum Ratings of the MOSFET Absolute Maximum Ratings of the MOSFET Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 GSS Drain current (Note 1) I 2.4 A D Drain current (pulsed) (Note 1) I 4.8 DP Channel temperature T 150 ch Note 1: Ensure that the channel temperature does not exceed 150 . Start of commercial production 2012-03 2014-04-04 1 Rev.3.0SSM5H90ATU 4.2. 4.2. 4.2. 4.2. Absolute Maximum Ratings of the Diode (Unless otherwise specified, TAbsolute Maximum Ratings of the Diode (Unless otherwise specified, TAbsolute Maximum Ratings of the Diode (Unless otherwise specified, TAbsolute Maximum Ratings of the Diode (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I 200 mA FM Average rectified current I 100 O Non-repetitive peak forward surge current (t = 10 ms) I 1 A FSM Junction temperature T 125 j 4.3. 4.3. Absolute Maximum Ratings of the Common SectionAbsolute Maximum Ratings of the Common Section 4.3. 4.3. Absolute Maximum Ratings of the Common SectionAbsolute Maximum Ratings of the Common Section (Unless otherwise specified, T(Unless otherwise specified, T = 25 = 25 )) (Unless otherwise specified, T(Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Rating Unit Power dissipation (Note 1) P 0.5 W D Power dissipation (t = 10 s) (Note 1) 0.8 Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: P for the entire IC D Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-04-04 2 Rev.3.0