Product Information

SSM6P49NU,LF

SSM6P49NU,LF electronic component of Toshiba

Datasheet
Mosfet Array 2 P-Channel (Dual) 20V 4A 1W Surface Mount 6-UDFN (2x2)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1948 ea
Line Total: USD 584.4

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

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SSM6P49NU,LF
Toshiba

3000 : USD 0.1936
6000 : USD 0.1916
9000 : USD 0.1898
12000 : USD 0.1879
15000 : USD 0.186
24000 : USD 0.1841
30000 : USD 0.1823
75000 : USD 0.1804
150000 : USD 0.1786

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

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SSM6P49NU,LF
Toshiba

3000 : USD 0.1948
6000 : USD 0.175
15000 : USD 0.1629
30000 : USD 0.1545
75000 : USD 0.1528

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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SSM6P49NU,LF
Toshiba

1 : USD 0.5573
10 : USD 0.4525
100 : USD 0.3379
500 : USD 0.2654
1000 : USD 0.2051

0 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

SSM6P49NU,LF
Toshiba

1 : USD 0.5573
10 : USD 0.4525
100 : USD 0.3379
500 : USD 0.2654
1000 : USD 0.2051

0 - WHS 5


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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SSM6P49NU,LF
Toshiba

1 : USD 1.026
10 : USD 0.8937
100 : USD 0.2678
500 : USD 0.2149
1000 : USD 0.1707
3000 : USD 0.1577
6000 : USD 0.1491
9000 : USD 0.1372
24000 : USD 0.1339

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

SSM6P49NU MOSFETs Silicon P-Channel MOS SSM6P49NUSSM6P49NUSSM6P49NUSSM6P49NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.8 V drive (2) Low drain-source on-resistance : R = 157 m (max) ( V = -1.8 V) DS(ON) GS R = 76 m (max) ( V = -2.5 V) DS(ON) GS R = 56 m (max) ( V = -4.5 V) DS(ON) GS R = 45 m (max) ( V = -10 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 UDFN6 Start of commercial production 2010-11 2016 Toshiba Corporation 2016-10-05 1 Rev.1.0SSM6P49NU 4. 4. 4. 4. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) (Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T = 25 = 25 = 25 = 25 )(Q1, Q2 Common))(Q1, Q2 Common))(Q1, Q2 Common))(Q1, Q2 Common) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I -4 A D Drain current (pulsed) (Note 1), (Note 2) I -16 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) 2 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 100 s, duty 1 % Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016 Toshiba Corporation 2016-10-05 2 Rev.1.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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