Product Information

TCR2EN34,LF(S

TCR2EN34,LF(S electronic component of Toshiba

Datasheet
LDO Regulator Pos 3.4V 0.2A 4-Pin SDFN EP T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

146: USD 0.2703 ea
Line Total: USD 39.46

9069 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 146  Multiples: 1
Pack Size: 1
Availability Price Quantity
9069 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 169
Multiples : 1
169 : USD 0.2176
200 : USD 0.2162
500 : USD 0.2114

     
Manufacturer
Product Category
RoHS - XON
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TCR2EN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EN series 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and an Auto-discharge function. The TCR2EN series is offered in the ultra small plastic mold package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm). It has a low dropout voltage of 160 mV ( 2.5 V output, I = 150 mA) with low output OUT noise voltage of 35 V (2.5 V output) and a load transient rms BOTTOM VIEW ILLUSTRATION response of only V = 55 mV ( I = 1 mA150 mA, C OUT OUT OUT SDFN4 =1.0 F). As small ceramic input and output capacitors can be used with the Weight: 0.6 mg (typ.) TCR2EN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features Low Drop-Out voltage V -V = 160 mV (typ.) at 2.5 V-output, I = 150 mA IN OUT OUT V -V = 210 mV (typ.) at 1.8 V-output, I = 150 mA IN OUT OUT V -V = 360 mV (typ.) at 1.2 V-output, I = 150 mA IN OUT OUT V -V = 490 mV (typ.) at 1.0 V-output, I = 150 mA IN OUT OUT Low output noise voltage V = 35 V (typ.) at 2.5 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 30 V (typ.) at 1.8 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 23 V (typ.) at 1.2 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 18 V (typ.) at 1.0 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT Fast load transient response (V = 55 mV (typ.) at I = 1 mA 150 mA, C =1.0 F ) OUT OUT OUT Low quiescent bias current ( I = 35 A (typ.) at I = 0 mA ) B OUT High ripple rejection ( R.R = 73 dB (typ.) at 2.5 V-output, I = 10 mA, f = 1 kHz ) OUT Wide range Output Voltage line up ( V = 1.0 to 3.6 V ) OUT High V accuracy 1.0% ( 1.8 V V ) OUT OUT Overcurrent protection Auto-discharge Pull down connection between CONTROL and GND Ceramic capacitors can be used ( C = 0.1F, C =1.0 F ) IN OUT Ultra Small package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm ) Start of commercial production 2013-11 1 2014-03-01 TCR2EN series = Absolute Maximum Ratings (Ta 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN Output current I 200 mA OUT Power dissipation P 300 (Note1) mW D Operation temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 24 Pin Assignment (top view) V CONTROL IN 4 3 * 1 2 V OUT GND *Center electrode should be connected to GND or Open 2 2014-03-01

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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