Product Information

TCR2LN12,LF(S

TCR2LN12,LF(S electronic component of Toshiba

Datasheet
LDO Regulator Pos 1.2V 0.2A 4-Pin SDFN EP T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

298: USD 0.1316 ea
Line Total: USD 39.22

9700 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 298  Multiples: 1
Pack Size: 1
Availability Price Quantity
9700 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 345
Multiples : 1
345 : USD 0.1113

     
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Product Category
RoHS - XON
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TCR2LN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2LN series Ultra low quiescent current 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2LN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring ultra low quiescent bias current and low dropout voltage. These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and Auto-discharge option. The TCR2LN series is offered in the ultra small plastic mold package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm) and has a low dropout voltage of 250 mV ( 2.5 V output, I = 150 mA). As small OUT ceramic input and output capacitors 0.1F can be used with the TCR2LN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. SDFN4 Weight : 0.6 mg ( typ.) Features Low quiescent bias current ( I = 2 A (max) at I = 0 mA, T = -40 to 85C) B OUT j Low Drop-Out voltage V -V = 250 mV (typ.) at 2.5 V-output, I = 150 mA IN OUT OUT Wide range output voltage line up ( V = 0.8 to 3.6 V ) OUT < High V accuracy 1.0% ( 1.8V V ) OUT = OUT Overcurrent protection Auto-discharge Pull down connection between CONTROL and GND Ceramic capacitors can be used ( C = 0.1 F, C =0.1 F ) IN OUT Ultra small package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm ) 1 2014-07-18 TCR2LN series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN Output current I 200 mA OUT Power dissipation P 300 (Note1) mW D Operation temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Pin Assignment (top view) V CONTROL IN 4 3 * 1 2 V OUT GND *Center electrode should be connected to GND or Open 2 2014-07-18

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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