Product Information

TK16N60W,S1VF(S

TK16N60W,S1VF(S electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

12: USD 3.1471 ea
Line Total: USD 37.77

87 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
87 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 8
Multiples : 1
8 : USD 4.7208
13 : USD 3.0001
30 : USD 2.9181
60 : USD 2.5419

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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The TK16N60W,S1VF is a high-speed low on-resistance N-channel MOSFET from Toshiba. It is designed for high-speed switching applications and is housed in a TO-220 package. This device features a low drain-to-source resistance for low power loss and improved efficiency. It also has a fast switching speed and capacitive load drivability for greater noise immunity in high-speed switching circuits. It has a drain current of up to 16A and a maximum drain-source voltage of 60V. This MOSFET is suitable for high-density switching power supplies, DC-DC converters, automotive relays and loads, and other consumer electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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