TK20N60W5,S1VF Toshiba

TK20N60W5,S1VF electronic component of Toshiba
TK20N60W5,S1VF Toshiba
TK20N60W5,S1VF MOSFETs
TK20N60W5,S1VF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TK20N60W5,S1VF MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK20N60W5,S1VF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TK20N60W5,S1VF
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-247
Datasheet: TK20N60W5,S1VF Datasheet (PDF)
Price (USD)
30: USD 2.5823 ea
Line Total: USD 77.47 
Availability : 0
  
QtyUnit Price
30$ 2.5823
250$ 2.3389
500$ 2.2096
1000$ 1.8971

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 30
Multiples : 1
QtyUnit Price
30$ 2.5823
250$ 2.3389
500$ 2.2096
1000$ 1.8971


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.9431
10$ 4.2627
100$ 3.4922
500$ 2.9728
1000$ 2.5071
2000$ 2.3818
5000$ 2.2923


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 30
Multiples : 30
QtyUnit Price
30$ 3.2867
60$ 3.109
120$ 2.9314
180$ 2.7537
240$ 2.5761


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.3625
10$ 3.5075
120$ 2.541
510$ 2.431
1020$ 2.409


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.036
2$ 5.88
3$ 5.628
6$ 3.71
15$ 3.5

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK20N60W5,S1VF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK20N60W5,S1VF and other electronic components in the MOSFETs category and beyond.

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TK20N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK20N60W5TK20N60W5TK20N60W5TK20N60W5 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Fast reverse recovery time: t = 110 ns (typ.) rr (2) Low drain-source on-resistance: R = 0.15 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: V = 3 to 4.5 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 20 A D Drain current (pulsed) (Note 1) I 80 DP Power dissipation (T = 25) P 165 W c D Single-pulse avalanche energy (Note 2) E 200 mJ AS Avalanche current I 5 A AR Reverse drain current (DC) (Note 1) I 20 DR Reverse drain current (pulsed) (Note 1) I 80 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2015-02 2015-01-15 1 Rev.3.0TK20N60W5 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.757 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 14 mH, R = 25 , I = 5 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015-01-15 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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