Product Information

TK39J60W5,S1VQ

TK39J60W5,S1VQ electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.6265 ea
Line Total: USD 11.63

13 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
13 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 11.6265
10 : USD 10.5225
25 : USD 10.212
100 : USD 8.602
250 : USD 8.4985
500 : USD 7.9235
1000 : USD 7.2795
2500 : USD 7.2795
5000 : USD 7.2795

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

TK39J60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK39J60W5TK39J60W5TK39J60W5TK39J60W5 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Fast reverse recovery time: t = 150 ns (typ.) rr (2) Low drain-source on-resistance: R = 0.062 (typ.) DS(ON) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: V = 3.0 to 4.5 V (V = 10 V, I = 1.9 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 38.8 A D Drain current (pulsed) (Note 1) I 155 DP Power dissipation (T = 25) P 270 W c D Single-pulse avalanche energy (Note 2) E 608 mJ AS Avalanche current I 9.7 A AR Reverse drain current (DC) (Note 1) I 38.8 DR Reverse drain current (pulsed) (Note 1) I 155 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-10 2013-12-26 1 Rev.5.0TK39J60W5 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.463 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 11.3 mH, R = 25 , I = 9.7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2013-12-26 2 Rev.5.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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