Product Information

TK40S06N1L,LQ

TK40S06N1L,LQ electronic component of Toshiba

Datasheet
MOSFET PWR MOSFET PD=88.2W F=1MHZ
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6445 ea
Line Total: USD 2.64

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 2.6445
10 : USD 0.9706
100 : USD 0.7244
250 : USD 0.703
500 : USD 0.5641
1000 : USD 0.4519
2000 : USD 0.4167

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

TK40S06N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK40S06N1LTK40S06N1LTK40S06N1LTK40S06N1L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Motor Drivers Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 8.7 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (4) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2015-06 2018-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TK40S06N1L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 40 A D Drain current (pulsed) (Note 1) I 80 DP Power dissipation (T = 25) (Note 2) P 88.2 W c D Single-pulse avalanche energy (Note 3) E 23.4 mJ AS Single-pulse avalanche current I 40 A AS Turn-off dV /dt ruggedness dV /dt 7.2 V/ns DS DS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.7 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe operating area is not only limited to thermal limits but also the current concentration phenomenon. This device should not be used under conditions outside its safe operating area shown herein. Note 3: V = 48 V, T = 25 (initial), L = 11.3 H, R = 25 , I = 40 A DD ch G AS Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2018-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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