TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) TK4A60DB Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: R = 1.6 (typ.) DS (ON) High forward transfer admittance: Y = 2.2 S (typ.) fs Low leakage current: I = 10 A (max) (V = 600V) DSS DS Enhancement mode: V = 2.4 to 4.4 V (V = 10 V, I = 1 mA) th DS D 1.14 0.15 0.69 0.15 Absolute Maximum Ratings (Ta = 25C) 0.2 M A 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 3.7 D 1: Gate Drain current A 2: Drain Pulse (Note 1) I 14.8 DP 3: Source Drain power dissipation (Tc = 25C) P 35 W D JEDEC Single pulse avalanche energy E 173 mJ AS (Note 2) JEITA SC-67 Avalanche current I 3.7 A AR TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) E 3.5 mJ AR Weight: 1.7 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.57 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C(initial), L = 22 mH, R = 25 , I = 3.7 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2009-04 1 2013-11-01 0.64 0.15 3.9 3.0 2.6 0.1 2.8 MAX. 13 0.5 15.0 0.3 4.5 0.2 TK4A60DB Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.4 4.4 V th DS D Drain-source ON resistance R V = 10 V, I = 1.9 A 1.6 2.0 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 1.9A 0.6 2.2 S fs DS D Input capacitance C 540 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 3 rss DS GS Output capacitance C 60 oss 10 V I = 1.9 A V Rise time t 18 D OUT r V GS 0 V Turn-on time t 40 on R = 105 L 50 Switching time ns Fall time t 8 f V 200 V DD Turn-off time t 55 off Duty 1%, t = 10 s w Total gate charge Q 11 g V 400 V, V = 10 V, I = 3.7 A 6 nC Gate-source charge Q gs DD GS D Gate-drain charge Q 5 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 3.7 A DR (Note 1) Pulse drain reverse current (Note 1) I 14.8 A DRP Forward voltage (diode) V I = 3.7 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 3.7 A, V = 0 V, 1000 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 5.5 C rr DR Marking Note 4 : A line under a Lot No. identifies the indication of product Labels G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to Part No. environmental matters such as the RoHS compatibility of Product. (or abbreviation code) The RoHS is Directive 2011/65/EU of the European Parliament and K4A60DB Lot No. of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note 4 2 2013-11-01