Product Information

TK7A60W5,S5VX

TK7A60W5,S5VX electronic component of Toshiba

Datasheet
MOSFET Power MOSFET N-Channel
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.343 ea
Line Total: USD 2.34

174 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
138 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4835
10 : USD 1.219
100 : USD 1.0833
250 : USD 1.0097
500 : USD 0.897
1000 : USD 0.7901
5000 : USD 0.7613
10000 : USD 0.7578

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
TK7J90E,S1E electronic component of Toshiba TK7J90E,S1E

Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
Stock : 165

TK7P60W,RVQ electronic component of Toshiba TK7P60W,RVQ

Toshiba MOSFET N-Ch 7A 60W FET 600V 490pF 15nC
Stock : 5

TK7P65W,RQ electronic component of Toshiba TK7P65W,RQ

N-Channel 650 V 6.8A (Ta) 60W (Tc) Surface Mount DPAK
Stock : 286

TK7A60W,S4VX electronic component of Toshiba TK7A60W,S4VX

Toshiba MOSFET N-Ch 7A 30W FET 600V 490pF 15nC
Stock : 26

TK7A65D(STA4,Q,M) electronic component of Toshiba TK7A65D(STA4,Q,M)

Toshiba MOSFET N-Ch MOS 7A 650V 45W 1200pF 0.98
Stock : 16

TK7P60W5,RVQ electronic component of Toshiba TK7P60W5,RVQ

MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode
Stock : 2000

TK7E80W,S1X electronic component of Toshiba TK7E80W,S1X

MOSFET N-Ch 800V 700pF 13nC 6.5A 110W
Stock : 0

TK7A80W,S4X electronic component of Toshiba TK7A80W,S4X

MOSFET PWR MOSFET PD=35W F=1MHZ
Stock : 269

TK7A65W,S5X electronic component of Toshiba TK7A65W,S5X

Trans MOSFET N-CH 650V 6.8A 3-Pin TO-220SIS
Stock : 129

TK7A90E,S4X electronic component of Toshiba TK7A90E,S4X

MOSFET PLN MOS 900V 2000m VGS=10V TO-220SIS
Stock : 255

More Products By Category "MOSFET"

Image Description
TK6A65W,S5X electronic component of Toshiba TK6A65W,S5X

MOSFET Power MOSFET N-Channel
Stock : 0

TK560P65Y,RQ electronic component of Toshiba TK560P65Y,RQ

MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A
Stock : 2008

TK560P60Y,RQ electronic component of Toshiba TK560P60Y,RQ

MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A
Stock : 2000

TK560A65Y,S4X electronic component of Toshiba TK560A65Y,S4X

MOSFET N-Ch DTMOSV 650V 30W 380pF 7.0A
Stock : 50

TK560A60Y,S4X electronic component of Toshiba TK560A60Y,S4X

MOSFET N-Ch DTMOSV 600V 30W 380pF 7.0A
Stock : 0

TK4R3A06PL,S4X electronic component of Toshiba TK4R3A06PL,S4X

MOSFET N-Ch 60V 3280pF 48.2nC 68A 36W
Stock : 736

TK3R1P04PL,RQ electronic component of Toshiba TK3R1P04PL,RQ

MOSFET N-Ch 40V 4670pF 60nC 130A 87W
Stock : 0

TK380P65Y,RQ electronic component of Toshiba TK380P65Y,RQ

MOSFET N-Ch DTMOSV 650V 80W 590pF 9.7A
Stock : 346

TK380P60Y,RQ electronic component of Toshiba TK380P60Y,RQ

MOSFET N-Ch DTMOSV 600V 80W 590pF 9.7A
Stock : 1457

TK31V60W5,LVQ electronic component of Toshiba TK31V60W5,LVQ

MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A
Stock : 0

Additional Infomation About Product

TK7A60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK7A60W5TK7A60W5TK7A60W5TK7A60W5 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators Motor Drivers 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Fast reverse recovery time: t = 75 ns (typ.) rr (2) Low drain-source on-resistance: R = 0.54 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: V = 3 to 4.5 V (V = 10 V, I = 0.35 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 2013-10 2014-02-25 1 Rev.3.0TK7A60W5 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 7.0 A D Drain current (pulsed) (Note 1) I 28 DP Power dissipation (T = 25) P 30 W c D Single-pulse avalanche energy (Note 2) E 92 mJ AS Avalanche current I 1.8 A AR Reverse drain current (DC) (Note 1) I 7.0 DR Reverse drain current (pulsed) (Note 1) I 28 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 4.17 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 49.9 mH, R = 25 , I = 1.8 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.3.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted