Product Information

TLP152(TPL,E(T

TLP152(TPL,E(T electronic component of Toshiba

Datasheet
Optocoupler; SMD; Channels:1; Out: IGBT driver; Uinsul:3.75kV

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

57: USD 0.65 ea
Line Total: USD 37.05

16983 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 57  Multiples: 1
Pack Size: 1
Availability Price Quantity
16983 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 57
Multiples : 1
57 : USD 0.65
100 : USD 0.5707
200 : USD 0.5456
500 : USD 0.5162
1000 : USD 0.4898
3000 : USD 0.453
6000 : USD 0.4317

2157 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 118
Multiples : 1
118 : USD 0.7765
250 : USD 0.761

     
Manufacturer
Product Category
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Kind Of Output
Type Of Semiconductor Component
Insulation Voltage
Slew Rate
Collector Current
Collector-Emitter Voltage
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TLP152 Photocouplers GaAAs Infrared LED & Photo IC TLP152TLP152TLP152TLP152 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Plasma Display Panels (PDPs) Transistor Inverters MOSFET Gate Drivers IGBT Gate Drivers 2. 2. GeneralGeneral 2. 2. GeneralGeneral The TLP152 is a photocoupler in a SO6 package that consists of a GaAAs infrared light-emitting diode(LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. 3. 3. 3. 3. FeaturesFeaturesFeaturesFeatures (1) Buffer logic type (Totem pole output) (2) Output peak current: 2.5 A (max) (3) Operating temperature: -40 to 100 (4) Supply current: 3 mA (max) (5) Supply voltage: 10 to 30 V (6) Threshold input current: 7.5 mA(max) (7) Propagation delay time: t = 190 ns (max), t = 170 ns (max) pHL pLH (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) 4. 4. Packaging and Pin AssignmentPackaging and Pin Assignment 4. 4. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V CC 11-4L1S 2012-09-14 1 Rev.3.0TLP152 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Fig. Fig. Fig. Fig. 5.15.15.15.1 Internal CircuitInternal CircuitInternal CircuitInternal Circuit Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. Truth Table 6.1. 6.1. 6.1. Truth TableTruth TableTruth Table Input LED M1 M2 Output H ON ON OFF H L OFF OFF ON L 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 (min) mm Clearance distances 5.0 (min) Internal isolation thickness 0.4 (min) 2012-09-14 2 Rev.3.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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