TLP185(GB-TPL,E) Toshiba

TLP185(GB-TPL,E) electronic component of Toshiba
TLP185(GB-TPL,E) Toshiba
TLP185(GB-TPL,E) Transistor Output Optocouplers
TLP185(GB-TPL,E)  Optoelectronics
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X-On Electronics has gained recognition as a prominent supplier of TLP185(GB-TPL,E) Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. TLP185(GB-TPL,E) Transistor Output Optocouplers are a product manufactured by Toshiba. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

Part No. TLP185(GB-TPL,E)
Manufacturer: Toshiba
Category: Transistor Output Optocouplers
Description: Transistor Output Optocouplers High ISO Photocplr 50mA IF 80V 3750Vrms
Datasheet: TLP185(GB-TPL,E) Datasheet (PDF)
Price (USD)
1: USD 0.4864 ea
Line Total: USD 0.49 
Availability : 0
  
QtyUnit Price
1$ 0.4864
10$ 0.2944
100$ 0.1736
1000$ 0.1426
3000$ 0.123
9000$ 0.1127
24000$ 0.1127
45000$ 0.1127
99000$ 0.1081

Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4864
10$ 0.2944
100$ 0.1736
1000$ 0.1426
3000$ 0.123
9000$ 0.1127
24000$ 0.1127
45000$ 0.1127
99000$ 0.1081

   
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RoHS - XON
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We are delighted to provide the TLP185(GB-TPL,E) from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TLP185(GB-TPL,E) and other electronic components in the Transistor Output Optocouplers category and beyond.

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TLP185(SE Photocouplers GaAs Infrared LED & Photo Transistor TLP185(SETLP185(SETLP185(SETLP185(SE 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Office Equipment Programmable Logic Controllers (PLCs) AC Adapters I/O Interface Boards 2. 2. GeneralGeneral 2. 2. GeneralGeneral The TLP185(SE consist of a photo transistor optically coupled to gallium arsenide infrared emitting diode. The TLP185(SE photocoupler is housed in the very small and thin SO6 package. Since TLP185(SE is smaller than DIP package, it s suitable for high-density surface mounting application such as programmable controllers. 3. 3. 3. 3. FeaturesFeaturesFeaturesFeatures (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50% (min) Rank GB: 100% (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 110 (5) UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 BSI-conformity: BS EN60065: 2002, BS EN60950-1: 2006 VDE-Conformity: EN60747-5-5 4. 4. Packaging and Pin AssignmentPackaging and Pin Assignment 4. 4. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathod 4: Emitter 6: Collector 11-4M1S 5. 5. 5. 5. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 5.1. 5.1. 5.1. 5.1. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 2013-05-15 1 Rev.1.0TLP185(SE 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.5 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Junction temperature T 125 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Input power dissipation (T 25 ) P /T -2.0 mW/ a D a derating Isolation voltage AC, 1 min, R.H. 60% BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 100 s, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 7. 7. 7. 7. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage V I = 10 mA 1.1 1.25 1.4 V F F Input reverse current I V = 5 V 5 A R R Input capacitance C V = 0 V, f = 1 MHz 30 pF t Detector Collector-emitter breakdown V I = 0.5 mA 80 V (BR)CEO C voltage Emitter-collector breakdown V I = 0.1 mA 7 (BR)ECO E voltage Dark Current I V = 48 V 0.01 0.08 A DARK CE V = 48 V, T = 85 2 50 CE a Collector-emitter capacitance C V = 0 V, f = 1 MHz 10 pF CE 2013-05-15 2 Rev.1.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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