Product Information

TLP227GA(F)

TLP227GA(F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=400V Ion=0.12A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

TLP227GA(F)
Toshiba

1 : USD 2.1577
10 : USD 2.0228
25 : USD 1.7981
50 : USD 1.7082
100 : USD 1.6182
N/A

Obsolete
0 - WHS 2

MOQ : 100
Multiples : 100

Stock Image

TLP227GA(F)
Toshiba

100 : USD 1.4472
500 : USD 1.3176
1000 : USD 1.1988
2500 : USD 1.1556
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Isolation Voltage
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Output Type
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Package / Case
Brand
Maximum Fall Time
Maximum Forward Diode Voltage
Maximum Input Diode Current
Maximum Reverse Diode Voltage
Maximum Rise Time
Number Of Channels Per Chip
Factory Pack Quantity :
Mounting Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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TLP227GA, TLP227GA-2 TOSHIBA Photocoupler Photo Relay TLP227GA, TLP227GA-2 Modem Unit: mm Telecommunications PBXs TLP227G The Toshiba TLP227GA series consist of an infrared-emitting diode optically coupled to a photo-MOSFET in a 4-pin DIP or a 8-pin DIP package, and has a peak off-State voltage of 400 V. Normally off function TLP227GA : DIP4 (1 form A) TLP227GA-2 : DIP8 (2 form A) Peak off-state voltage : 400 V (min) Trigger LED current : 3 mA (max) On-state current : 120 mA (max) On-state resistance : 35 (max) JEDEC Isolation voltage : 2500 Vrms (min) UL-recognized : UL 1577, File No.E67349 JEITA cUL-recognized : CSA Component Acceptance Service No.5A TOSHIBA 11-5B2S File No.E67349 Weight: 0.26 g (typ.) Pin Configuration (top view) TLP227GA-2 TLP227GA TLP227GA-2 1 4 1 8 2 3 2 7 1: Anode 3 6 2: Cathode 3: Drain 4: Drain 4 5 1, 3 : Anode 2, 4 : Cathode JEDEC 5 : Drain D1 6 : Drain D2 JEITA 7 : Drain D3 8 : Drain D4 TOSHIBA 11-10C4S Weight: 0.54 g (typ.) Start of commercial production 2000-04 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP227GA, TLP227GA-2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Peak forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 5 V R P 50 mW Diode power dissipation D Diode power dissipation derating (Ta 25C) P /C -0.5 mW/C D Junction temperature T 125 C j Off-state output terminal voltage V 400 V OFF TLP227GA On-state One channel I 120 mA ON current TLP227GA-2 Both channel TLP227GA On-state current One channel I /C 1.2 mA/C ON rating TLP227GA-2 (Ta 25C) Both channel TLP227GA 432 Output power dissipation Po mW TLP227GA-2 600 TLP227GA 4.32 Output power dissipation Po / C mW / C derating (Ta 25C) TLP227GA-2 6.0 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 320 V DD Forward current I 5 7.5 25 mA F On-state current I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector Led

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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